device simulation – TechConnect Briefs

Carbon Nanotube Field Effect Transistor (CNTFET) 2-D Channel Electrostatic Potential Model for TCAD Application

A 2-D channel electrostatic potential model of CNTFET is presented. The model is developed by directly solving Laplace’s equation in cylindrical coordinates with appropriate boundary conditions. To the best of our knowledge, the Technology Computer [...]

Detailed Analysis of Quantum-Effects in Nanowire Tunneling Transistors with Different Channel-Profiles

Heigl A., Wachutka G., TU Munich, DE

Combining the operational principle of the tunneling field effect transistor with the idea of a multigate channel control appears as an attractive option to avoid unwanted shortchannel effects in nanometer-scale MOS-devices. This motivated us to [...]

Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs

Horio K., Shibaura Institute of Technology, JP

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves [...]

A Study on the Electrical Properties of Plasma Nitrided Oxide Gate Dielectric in Flash Memory

Park M., Suh K., Lee S., Kang H., Kim K., Kim K., Samsung Electronics, KR

In this paper, we address the effect of Plasma Nitridation on the gate dielectric by a combined experimental and simulation study of gate oxidation. Firstly, Boron segregation at the Si/SiO2 interface is experimentally characterized by [...]

Numerical Simulation of Drain-Current Transients and Current Compression in GaN MESFETs

Takayanagi H., Itagaki K., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analyses of GaN metal-semiconductor field effect transistors (MESFETs) are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a [...]

New One-Particle Monte Carlo Method for Nanoscale Device Simulation

Brugger S.C., Schenk A., Swiss Federal Institut of Technology, CH

A new one-particle Monte Carlo iteration scheme has been found toself-consistently take into account generation-recombinationprocesses. The basic idea is to couple the BTE not only with thePoisson equation, but also with the continuity equation by [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

Schmithusen B., Gartner K., Fichtner W., Integrated Systems Laboratory, ETHZ, CH

A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for [...]

Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs

Hane M., Ezaki T., Ikezawa T., NEC Corporation, JP

We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US

The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]