A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

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A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter-Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 504 - 507
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Informatics, Modeling & Simulation
ISBN: 0-9728422-1-7