compact modeling – Page 2 – TechConnect Briefs

Compact Modeling of Signal Transients and Integrity Analysis for Dispersionless Interconnect

Zhao W., PKU HKUST Shenzhen Institution of IER., CN

In this paper, a compact model for transient response of the dispersionless interconnects is rigorously derived with resistive, inductive and capacitive load terminations. The proposed compact models are verified by the HSPICE simulation result to [...]

Electromechanical and Electromagnetic Simulation of RF-MEMS Complex Networks Based on Compact Modeling Approach

Iannacci J., Faes A., Kuenzig T., Niessner M., Wachutka G., Fondazione Bruno Kessler - FBK, IT

RF-MEMS, i.e. MicroElectroMechanical-Systems for Radio Frequency applications, have been attracting the interest of the scientific community for more than one decade, thanks to their high performance and large reconfigurability. The employment of RF-MEMS based devices [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

Design study of CNT transistors layouts for high frequency analog circuits

Claus M., Technische Universität Dresden, DE

CNTFET technology is examined for high speed analog circuits. Design guidelines are deduced based on a realistic extrinsic circuit model. Moreover, numerical device simulations are used to derive specifications for CNTFET compact models suitable for [...]

Improved layout dependent modeling of the base resistance in advanced HBTs

Lehmann S., Schroter M., University of Technology Dresden, DE

Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C., Peking University, CN

An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]

Numerical Analysis on Si-Ge Nanowire MOSFETs with Core-Shell Structure

Fu Y., He J., Liu F., Zhang L., Feng J., Ma C., Peking University, CN

This paper investigates the transport properties of the silicon/Germanium nanowire MOSFETs with core-shell structure by a numerical method. Coupling Poisson’s equation to Schrödinger’s equation for electrostatics calculation, and electron structure to current transport equation for [...]

An Approximate Explicit Solution to General Diode Equation

He J., Tao Y., Yang C., Feng M., Li B., Bian W., Chen Y., Peking University, CN

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]