Zhou X. – Page 2 – TechConnect Briefs

Charge Partition in Lateral Nonuniformly-Doped Transistor

Zhang J., Zhou X., Zhu G., Lin S., Nanyang Technological University, SG

In this work, we aim to model the LDMOS capacitance behavior of the core channel. In order to simplify the problem, the diffused doping profile in the core channel is approximated as a step profile. [...]

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Zhou X., Nanyang Technological University, SG

This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG

This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., Xu Y., Zhang L., Zhou W., Zhou X., Zhou W., Zhou X., He J., Peking University, CN

This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Zhang J., Zhang L., He J., Zhang J., Zhang L., Zhou X., Zhou Z., Zhou X., Zhou Z., Peking University, CN

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based [...]

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]

Authors: Zhou X.

Charge Partition in Lateral Nonuniformly-Doped Transistor

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Compact Model Application to Statistical/Probabilistic Technology Variations

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs