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HomeAuthorsZhou X.

Authors: Zhou X.

Hybrid Process Design Kit: Single-Chip Monolithic III-V/Si Cascode GaN-HEMT

Chiah S.B., Zhou X., Lee K.E.K., Antoniadis D., Nanyang Technological University, SG
In this paper, we present the design of a cascode GaN-HEMT (CGH) structure in the monolithic integration of III-V/Si fabrication platform to fabricate monolithic III-V/Si CGH structures on a single chip by using hybrid process [...]

A Hybrid Process Design Kit: Towards Integrating CMOS and III-V Devices

Chiah S.B., Zhou X., Lee K.E.K., Ng C.Y., Antoniadis D., Fitzgerald E.A., Nanyang Technological University, SG
A hybrid process design kit (PDK) for novel integrated circuits incorporating high performance compound semiconductor materials and devices into existing production Si-CMOS compatible foundry process is presented. The hybrid PDK permits direct integration of Au-free [...]

Preparation and mechanical properties of fiber-reinforced silica aerogels and its phase change nanocomposite

Zhou X., Georgia Institute of Technology, US
The present study is devoted to the investigation of mechanical properties of fiber-reinforced silica aerogels and composite phase change materials. We firstly reported our study on the preparation process of fiber-reinforced silica aerogels and PCM/silica [...]

Thermodynamic/heat transfer of n-eicosane in silica nano-porous materials

Zhou X., Georgia Institute of Technology, US
This study mainly involved the fabrication of n-eicosane/silica nanocomposite and modeling of combined thermodynamic/heat transfer based on the prepared composite structure and measured thermo-physical data. we performed combined thermodynamic/heat transfer analysis to obtain the total [...]

Synthesis of Reduced Graphene Oxide Films using Atmospheric Plasma and Furnace Annealing

Ayler R., Tong Y., Ramabadran U., Zhou X., Ryan G., Farhat S., Kettering University, US
Graphene oxide (GO) is an electrical insulator with good mechanical and thermal properties. It exhibits increased conductivity when the Carbon to Oxygen ratio is high. Our work aims to efficiently fabricate inexpensive flexible reduced graphene [...]

Compact Model Characteristics for Generic MIS-HEMTs

Zhou H.T., Zhou X., Chiah S.B., Syamal B., Zhou H.T., Zhou X., Ajaykumar A., Liu X., Nanyang Technological University, SG
III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si [...]

Nano Graphene Oxide as Drug Carrier for Antihypertensive Agent: Benazepril, Captopril and Losartan

Wang J., Long Y., Tao C., Liu H., Zhu H., Zhou X., National University of Defense Technology, CN
Graphene oxide (GO) offers large surface and novel biocompatible properties that are currently being explored for advanced drug carriers. GO has a one-atom-thick two dimensional carbon system, which contains several kinds of oxygen functional groups [...]

Unified Regional Approach to High Temperature SOI DC/AC Modeling

Chiah S.B., Zhou X., Chen H-M, Chen Z., Chen H-M, Chen Z., Nanyang Technological University, SG
This paper extends the recent model development [1] to include temperature effect in a range from room temperature to 300C. The extraction of the temperature coefficients used in the model and the prediction of the [...]

A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs

Zhou X., Chiah S.B., Nanyang Technological University, SG
Compact modeling for doped-body MOSFETs, such as ultra-thin body (UTB) SOI and double-gate (DG) FinFETs, represents the most challenging task since it involves the Poisson’s solution with two boundary conditions, which is not available when [...]

An analytical 2DEG model considering the two lowest subbands

Zhang J., Zhou X., NTU singapore, SG
A general 2DEG density model that considers the lowest two subbands (subband split) as well as the subthrehold region is derived and validated through comparison with the numerical (exact) solutions. Good agreement is obtained between [...]

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