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HomeAuthorsZhang L.

Authors: Zhang L.

Synthesis and characterization of FITC-aminated agarose as highly-fluorescent labeling agent

Zhang L., Huang J., Chu B., Tang S., Jinan University, CN
A new fluorescent agent, FITC labeling agarose is designed to determine whether it can act as an effective fluorescent labeling agent of cell or not. The degraded agarose reacted with 3-chloro-1, 2-epoxypropane in NaOH medium [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., Xu Y., Zhang L., Zhou W., Zhou X., Zhou W., Zhou X., He J., Peking University, CN
This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Zhang J., Zhang L., He J., Zhang J., Zhang L., Zhou X., Zhou Z., Zhou X., Zhou Z., Peking University, CN
A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based [...]

Oxygen Vacancies induced ferromagnetism in undoped and Cr doped SnO2 nanowires

Zhang L., Ge S., Zuo Y., Jing Q., Lanzhou University, CN
Observations of room temperature ferromagnetism (FM) in various pristine oxides have been reported recently. The findings have urged researchers to explore the origin of FM, but there is no uniform model to explain this issue [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN
Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN
A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN
In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor

He F., Chen Y., Mu X., Lou H., Zhang L., Song Y., SZPKU, CN
In this paper, an analytical terahertz (THz) signal detection model of Silicon-based nanowire MOSFET (NWFET) is proposed. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport [...]

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

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