Rozeau O. – TechConnect Briefs

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

Cousin B., Reyboz M., Rozeau O., Jaud M-A, Ernst T., Jomaah J., CEA/LETI/MINATEC, FR

A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface [...]

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Reyboz M., Martin P., Rozeau O., Poiroux T., CEA-LETI, FR

We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. [...]

Explicit Short Channel Compact Model of Independent Double Gate Mosfet

Reyboz M., Rozeau O., Poiroux T., Martin P., Cavelier M., Jomaah J., CEA-LETI, FR

This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in [...]

Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

Reyboz M., Poiroux T., Rozeau O., Martin P., Jomaah J., CEA, FR

This paper describes an explicit compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparisons with Atlas simulations. The model was implemented in VerilogA in [...]