Lin X. – TechConnect Briefs

Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads

Liu Chi, Zhou Z., Lin X., Xia J., Zhang X., He J., Peking University, CN

In this paper, compact models for transient response of dispersionless interconnects are rigorously derived with resistive, inductive and capacitive terminal loads. The proposed compact models are verified by the HSPICE simulation with high accuracy and [...]

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Yan Z., Zhu J., Wang Y., Lin X., He J., Peking University, CN

A new numerical method is proposed to study nonlinear response of two-dimensional electron plasmas in the channel of field effect transistor structures. The numerical simulations are not only in accordance with the existing theory, but [...]

Analytic Modeling of BioFET as a pH Sensor

Song Y., Guan Y., Zhang J., Zhang X., He J., Zhang J., Zhang X., Lin X., Peking University, CN

In this paper, the analytic modeling of the BioFET as a pH sensor has been developed from the complete surface potential equation and channel expression. Combining the physical MOSFET theory with electrochemistry of the electrolyte, [...]

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

Zhu J., Yan Z., Wang Y., Lin X., He J., Peking University, CN

Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is [...]

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Yan Z., Zhu J., Wang Y., Lin X., He J., Peking University, CN

A new numerical method is proposed to study nonlinear response of two-dimensional electron plasmas in the channel of field effect transistor structures. The numerical simulations are not only in accordance with the existing theory, but [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

Process Aware Hybrid SPICE Models using TCAD and Silicon Data

Mahotin Y., Tirumala S., Lin X., Pramanik D., Synopsys, Inc., US

This paper describes the methodology for extraction of process dependant hybrid SPICE compact model parameters using calibrated TCAD data and measured Silicon data. Process dependence of electrical curves is, initially, estimated using TCAD data set. [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]