This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most limiting factor for the use of high frequency resonators in circuit application. We demonstrate the necessity of using a MOSFET detection instead of a capacitive one for very high frequency resonators. The analytical model is based on the Resonant Gate Transistor (RGT) model that was adjusted to include new resonator geometries, scaled nm-to-ìm device dimensions and based on a more advanced transistor model.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 553 - 556
Industry sector: Sensors, MEMS, Electronics
Topic: MEMS & NEMS Devices, Modeling & Applications