Synopsys, Inc. – TechConnect Briefs

Si-Based Process Aware SPICE Models for Statistical Circuit Analysis

Krishnamurthy S., Dasarapu V.K., Mahotin Y., Ryles R., Roger F., Uppal S., Mukherjee P., Cuthbertson A., Lin X-W, Synopsys, Inc., US

This paper describes methodology for constructing compact SPICE models as a function of process parameter variations. The methodology involves global extraction of process-dependant SPICE model parametersfrom silicon data. The robustness of this methodology was tested [...]

An Improved Impact Ionization Model for SOI Circuit Simulation

Xi X., Li F., Liu W., Tudor B., Wang P., Wang W., Liu W., Lee F., Wang P., Wang W., Subba N., Goo J-S, Synopsys, Inc., US

The impact ionization (II) model accuracy issue in industry standard SOI MOSFET is discussed in the paper. Based on Medici 2D simulation study, an improved impact ionization model is proposed which can capture the voltage [...]

An Accurate and Versatile ED- and LD-MOS Model for High-Voltage CMOS IC Spice Simulation

Tudor B., Wang J.W., Hu B.P., Liu W., Lee F., Synopsys, Inc., US

The paper presents a high-voltage compact MOSFET model that has been proven physically accurate and numerically robust for various and generations of high-voltage ED (extended drain) and LD (laterally double diffused) production CMOS process technologies. [...]

Process Aware Hybrid SPICE Models using TCAD and Silicon Data

Mahotin Y., Tirumala S., Lin X., Pramanik D., Synopsys, Inc., US

This paper describes the methodology for extraction of process dependant hybrid SPICE compact model parameters using calibrated TCAD data and measured Silicon data. Process dependence of electrical curves is, initially, estimated using TCAD data set. [...]

TCAD-based Process Dependant HSPICE Model Parameter Extraction

Mahotin Y., Tirumala S., Lin X-W, Pramanik D., Synopsys, Inc., US

This paper describes the methodology for global extraction of HSPICE compact model parameters as explicit polynomial functions of process parameter variations (halo dosage, gate oxidation temperature etc). Electrical data required for extraction is obtained from [...]

An Optimization Method of Deep Submicron SOI Compact Model Parameter Extraction

Mahotin Y., Mickevicius R., Synopsys, Inc., US

As SOI rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) devices. [...]