An Optimization Method of Deep Submicron SOI Compact Model Parameter Extraction


Keywords: , , ,

As SOI rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) devices. However, the underlying physics of these two devices is quite different and therefore, matching of their characteristics is problematic. In this work we report a novel direct method. For the first time the model parameters of deep submicron SOI have been extracted using only FB device. In addition to standard model parameters, we have been able to extract gate current, impact ionization current, GIDL current, as well as diode and BJT currents using only FB device.

PDF of paper:

Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 211 - 214
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0