STMicroelectronics – TechConnect Briefs

Is one gyroscope enough?

Capovilla M., STMicroelectronics, US

Market requirements push on small, lightweight portable device with advance feature for user interface, gesture recognition and camera features. New generation of portable device required gyroscope sensing capability for advanced gaming, high-performance motion detection, gesture [...]

PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

D’Agostino C., Flatresse P., Beigne E., Belleville M., STMicroelectronics, FR

A novel analytical methodology is proposed for statistical leakage estimation of CMOS circuits considering statistical process variations. The goal of the proposed methodology is to obtain a time-efficient and accurate estimation of the PDF of [...]

Embedded non–volatile memory study with surface potential based model

Garetto D., Zaka A., Quenette V., Rideau D., Dornel E., Clark W.F., Minondo M., Tavernier C., Rafhay Q., Clerc R., Schmid A., Leblebici Y., Jaouen H., STMicroelectronics, FR

Coupling coefficients calculation is known to be a critical issue in Non-Volatile Memory cell compact modelling. To this purpose, the accuracy of the capacitive network method can be significantly improved using the charge balance method, [...]

Modeling of gain in advanced CMOS technologies

Spessot A., Gattel F., Fantini P., Marmiroli A., STMicroelectronics, IT

The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single [...]

Process Sensitivity Analysis of a 0.25-um NMOS Transistor Using Two-Dimensional Simulations

Keshavarz A.A., Laurent L.F., Leonardi P.C., STMicroelectronics, US

This work attempts to predict the sensitivity of the 0.25-um NMOS transistor characteristics and parameters to selected manufacturing process steps. The transistor is on the 0.25um line of production in STMicroelectronics. The methdology uses two-dimensional [...]

Fast and Efficient Nucleic Acid Testing by ST‘s In-CheckTM Lab-on-Chip Platform

Conoci S., Di Francesco F., Di Pietro P., Di Trapani G., Petralia S., Amore M.G., San Biagio F., Alaimo G., Iacono G., Alessi E., Ricceri D., Di Francesco F., Di Pietro P., Di Trapani G., Di Francesco F., Di Pietro P., Di Trapani G., Palmieri M., STMicroelectronics, IT

Nucleic Acid Testing (NAT) represents one the most sensitive and effective method for several applications in the molecular diagnostic area, including clinical, industrial, veterinary and research applications. In this context, the development of miniaturized devices [...]

A Comprehensive Modeling of MOS Transistors in a 0.35um Technology for Analog and Digital Applications

Keshavarz A., Khare P., Sampson R., STMicroelectronics, US

The purpose of this work is to present a comprehensive report of the MOS transistor characteristics in a 0.35um technology, both types being surface devices. Results include extensive geometrical and temperature dependencies of the most [...]