Peking University – Page 4 – TechConnect Briefs

An Approximate Explicit Solution to General Diode Equation

Bian W., Chen Y., Feng M., He J., Li B., Tao Y., Yang C., Peking University, CN

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

Bian W., Chan M., He J., Liu F., Lu K., Tao Y., Wang T., Wu W., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Bian W., Chen Y., He J., Li B., Tao Y., Peking University, CN

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts

Jie B.B., Sah C-T, Peking University, CN

Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- [...]

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

Chan M., He J., Wang Y., Zhang X., Peking University, CN

A carrier-based analytic DCIV model for the undoped cylindrical surrounding-gate MOSFETs is presented in this paper. It is based on an exact solution of the Poisson equation and a Pao-Sah current formulation in terms of [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

Chan M., He J., Huang R., Niu X., Song Y., Wang Y., Zhang G., Zhang X., Peking University, CN

This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]

Design and Simulation of A Novel Highly Symmetrical Piezoelectric Triaxial Accelerometer

Hao Y., Li G., Li T., Li Z., Wang C., Wu G., Peking University, CN

A monolithic piezoelectric triaxial accelerometer, using a highly symmetric quad-beam structure with a single seismic mass, has been developed. The structure of the accelerometer is analyzed in detail theoretically and numerically. Static and modal simulations [...]

Electrical Analogue of Capacitive Force-Balanced Accelerometer Used in HSPICE Simulator

Li Z., Wang Y.Y., Wu G., Peking University, CN

Analyzing mechanism of accelerometer, electrical analogue of capacitive force-balanced accelerometer used in HSPICE simulator has been developed. Comparing to the former equivalent circuit, we use acceleration instead of displacement as input variable. Thus we can [...]