NXP Semiconductors – TechConnect Briefs

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

Smit G.D.J., Scholten A.J., Pijper R.M.T., Tiemeijer L.F., van der Toorn R., Klaassen D.B.M., Scheer P., Juge A., NXP Semiconductors, NL

Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding [...]

A PSP based scalable compact FinFET model

Smit G.D.J., Scholten A.J., Serra N., Pijper R.M.T., van Langevelde R., Mercha A., Gildenblat G., Klaassen D.B.M., NXP Semiconductors, NL

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

A new compact scalable circuit model for RF MEMS switches

Suy H.M.R., Huizing H.G.A., Steeneken P.G., Yanson O.I., NXP Semiconductors, NL

In this paper, a new compact scalable circuit model for RF MEMS switches is presented. This new one-dimensional model combines the computational speed of one-dimensional models, with the accuracy of multi-dimensional models. The model includes [...]