A new compact scalable circuit model for RF MEMS switches

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In this paper, a new compact scalable circuit model for RF MEMS switches is presented. This new one-dimensional model combines the computational speed of one-dimensional models, with the accuracy of multi-dimensional models. The model includes a wide range of physical phenomena, such as squeeze film damping, contact, fringing electrostatic fields, and membrane bending. In addition, a parasitic network is developed that models the skin effect in the switch. The model is written in Verilog-A for easy implementation in any circuit simulator. The model is extensively numerically tested, and is validated on CV, transient, and S-parameter measurements. In contrast to earlier 1D models, a higher level of accuracy is achieved without the compromise of a loss of computational speed or ease-of-use in circuit simulators.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 20, 2007
Pages: 65 - 68
Industry sector: Sensors, MEMS, Electronics
Topics: MEMS & NEMS Devices, Modeling & Applications
ISBN: 1-4200-6184-4