Nanyang Technological University – Page 8

A Simple and Scalable Model for Spiral Inductors on Silicon

Sia C.B., Yeo K.S., Goh W.L., Swe T.N., Ma J.G., Do M.A., Lin J.S., Chan L., Nanyang Technological University, US

A new, simple and scalable inductor model for silicon-based spiral inductors has been presented in this paper. Compared to the conventional model, it can predict accurately the inductive characteristics and quality factor for inductors of [...]

Simulation and Optimum Design of Finline/Slotted Line Millimeter Wave Antenna

Fu J.S., Ng C.L., Kwang Y., Sia E.K., Tan S.H., Nanyang Technological University, SG

Simulations are carried out using XFDTD software to determine the set of input values for several parameters of the fin line antenna, to give an optimized radiation performance in the principal planes. A further modification [...]

Antiphase Design for Balanced Oscillators

Liu X., Sheng Z., Law C.L., Qian C., Sun Z., Nanyang Technological University, SG

A novel general design method, which is based on S-parameters and suitable for MMIC and MEMS, has been developed for antiphase balanced oscillators in this paper. To demostrate the design method, a new type of [...]

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Zhou X., Lim K.Y., Nanyang Technological University, SG

A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s effective channel length (Leff) with critical-dimension correction to poly-gate length (Lg) and correlation to metallurgical channel length (Lmet). A self-consistent compact model for [...]

Numerical Simulation of Pulse-Width-Modulated Micropumps with Diffuser/Nozzle Elements

Nguyen N-T., Huang X., Nanyang Technological University, SG

This paper presents the numerical simulation of a new control method for dynamic micropumps with diffuser/nozzle elements: the pulse-width-modulation (PWM) of the drive signal. A piezo disk with a square wave signal actuates the pump, [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

Zhou X., Lim K.Y., Nanyang Technological University, SG

This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

Liu P.C., Lin H., Nanyang Technological University, SG

An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length [...]