Inha University – Page 2 – TechConnect Briefs

Three-dimensional Simulation method of Anisotropic Wet Chemical Etching Process

Lee J-G, Won T., Inha University, KR

Anisotropic wet chemical etching is still one of the fundamental techniques employed in silicon bulk micromaching. However, there are still unsolved problems with the simulation of the process. And most of the available simulation software [...]

First-principle Study for Neutral Indium Migration in Silicon

Yoon K-S, Won T., Inha University, KR

We could figure out the atomistic configurations and migration energy during indium diffusion in silicon through our ab-initio calculations, which consists of searching for saddle points from a minimum and reaction pathway between the two [...]

KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects

Yoo J-H, Hwang C-O, Seo J., Kwon O., Won T., Inha University, KR

In this paper, we discuss a model for investigating the KMC parameters for interstitial and vacancy and we propose a novel atomistic model to explain the evolution of interstitial clusters during boron diffusion for kinetic [...]

RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits

Jung C., Yoon S., Won T., Inha University, KR

In this paper we propose a realizable RLC-in-RLC-out technique to reduce parasitic parameters. The proposed technique is an efficient MOR (Model Order Reduction) method, which makes it possible to control the rise and delay time [...]

Topography Simulation for Structural Analysis Using Cell Advancing Method

Lee J-G, Yoon S., Kwon O., Won T., Inha University, KR

We propose an cell advancing method which is different but stems from the traditional cell method for accurate topography simulation. It is considered that the cell advancing method is very suitable to figure out the [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Park I-S, Won T., Inha University, KR

We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]

2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET

Kim K., Kwon O., Seo J., Won T., Inha University, KR

A two-dimensional quantum mechanical modeling has been performed to simulate a nano-scale FinFET by obtaining the self-consistent solution of coupled Poisson and Schrödinger equations. Calculated current-voltage (I-V) curves are carefully compared with experimental data to [...]

Molecular Dynamics (MD) Calculation on Ion Implantation Process with Dynamic Annealing for Ultra-shallow Junction Formation

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report a molecular dynamics (MD) simulation of the ion implantation for nano-scale devices with ultra-shallow junctions. In order to model the profile of ion distribution in nanometer scale, the molecular dynamics [...]

Corner Charge Singularity of Conductors

Hwang C-O, Given J.A., Inha University, KR

In this paper, we investigate a diffusion-based simulation method for the corner singularity of a conducting object, rapidly evaluating the power-law singularity associated with the corner of the conducting object for the computation of capacitance [...]

Atomistic Process and Simulation in the Regime of sub-50nm Gate Length

Kwon O., Kim K., Seo J., Won T., Inha University, KR

In this paper, we report an atomistic simulation approach for sub-50nm gate length FETs. The proposed atomistic approach consists of the coupling the molecular dynamics (MD) simulations of the collision cascades for ion implantation process [...]