IBM – TechConnect Briefs

Experiment and Model for Distance-Dependent Mismatch

Lu N., Zamdmer N., Wachnik R., IBM, US

We study distance-dependent mismatch and spatial correlation problems both experimentally and theoretically. The two problems are intimately connected. We present our hardware results and, using the relationship between mismatch and correlation, show that the relationship [...]

New Elements and Features in the Process Design Kits for a FinFET Technology

Lu N., Baizley A., Guan X., Johnson J., McCullen J., Ozbek A., Rahman A., Wang H., Yu M., Zemke C., Rausch W., Wachnik R., IBM, US

Parasitic resistance is a primary performance constraint in FinFET technologies. We report that new and innovative elements and features have been introduced into Process Design Kits for 14nm FinFET technology. They enable accurate and efficient [...]

GIDL Current and Pass-Gate Body Potential Modeling in 22nm HKMG PD-SOI CMOS

Luo L., Walko J.P., Johnson J.M., Springer S., IBM, US

In a floating PD (partially depleted) SOI (silicon-on-insulator) transistor, the internal DC body potential is determined by the various body current components, mainly including diode current, gate-to-body oxide tunneling current (Igb), impact ionization current (II) [...]

An Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

Lu N., Hook T.B., Johnson J.B., Wermer C., Putnam C., Wachnik R.A., IBM, US

We present a schematic transistor model for multi-finger multi-fin FETs, which reduces an initial complex finFET network to a very simple finFET network. The schematic finFET model is accurate in predicting overall finFET characteristics, including [...]

Affiliations: IBM

Experiment and Model for Distance-Dependent Mismatch

New Elements and Features in the Process Design Kits for a FinFET Technology

GIDL Current and Pass-Gate Body Potential Modeling in 22nm HKMG PD-SOI CMOS

An Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

Computational Studies on Mechanisms for the Organocatalytic Depolymerization of Poly(ethylene) Terephthalate

Computational Studies on Mechanisms for the Organocatalytic Depolymerization of Poly(ethylene) Terephthalate

Discreteness and Distribution of Drain Currents in FinFETs

Characterization and Modeling of Metal Finger Capacitors

Modeling of Mismatch and Across-Chip Variations in Compact Device Models

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS