Arizona State University – Page 7

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US

Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

Harris J., Vasileska D., Arizona State University, US

Many factors are responsible for the continued shift in industry prototyping preference from device fabrication to device simulation. One of the incentives for this transition is the generality and flexibility gained by avoiding a physical [...]

Optimization of FIBMOSs through 2-D Device Simulations

Kang J., Schroder D.K., Pivin D.P., Arizona State University, US

Channel engineering can enhance the performance of MOSFETs. Focused ion beam (FIB) implant technology is one approach for such channel engineering. We have investigated FIB and present a sophisticated optimization technique for FIB MOSFETs (FIBMOS) [...]

Ultrasmall Devices: Are We Ready for Quantum Effects?

Ferry D.K., Arizona State University, US

It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the [...]

Modeling Nucleation and Growth of Voids During Electromigration

Richards D., Adams J.B., Borucki L.J., Arizona State University, US

We calculate the formation energy of small voids in Al and Cu, both at the bulk and at grain boundaries, using the Embedded Atom Method. Then, we use those results as input to a Kinetic [...]

Modeling Facet Growth of Cu Thin Films

Wang Z., Li Y., Adams J.B., Arizona State University, US

We present a Kinetic Lattice Monte Carlo (KLMC) model, which describes deposition, surface self-diffusion, nucleation, and film growth on fcc metal substrates. The activation energies for diffusion are calculated using embedded-atom method (EAM). Using this [...]

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Cellular Automata Studies of Vertical MOSFETs

Saraniti M., Wigger S., Zandler G., Formicone G., Goodnick S.M., Arizona State University, US

This paper presents an overview of the cellular automata (CA) method for semiconductor device simulation. The main advantages of the CA method over the Monte Carlo (MC) approach are presented, and limitations of its modeling [...]

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Vasileska D., Ferry D.K., Arizona State University, US

We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the [...]