US – Page 469 – TechConnect Briefs

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices

Wigger S.J., Saraniti M., Goodnick S.M., Arizona State University, US

In this paper, a full three-dimensional (3D), inhomogenous linear multi-grid Poisson solver is presented for application in particle-based simulation tools for devic emodeling. This algorithm represents the first such fully 3D multi-grid solver for device [...]

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices

Sverdrup P.G., Ju Y.S., Goodson K.E., Stanford University, US

The temperature rise in compact silicon devices is strongly underestimated at present by simulations using conventional heat diffusion theory, which is based on the Fourier heat conduction law. This problem is particularly important for devices [...]

Modeling On-Currents for n-MOSFETs: Ultimate Limits vs. the NTRS

Assad F., Ren Z., Vasileska D., Datta S., Lundstrom M.S., Purdue University, US

The continued evolution of Si technology hinges to a large extent on the ability to maintain high on-currents while achieving low off-currents. As we move from sub-micron to nanoscale technology, it is not at all [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US

The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US

Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US

The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T., Boston University, US

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]

CAD Analyses of PCR Well Containment

Deshpande M., Greiner K.B., Romanowicz B.F., Gilbert J.R., Microcosm Technologies, Inc., US

Design analysis of PCR (Polymerase Chain Reaction) microwells are conducted to observe the contamination between neighboring wells on a PCR chip during the reaction. Thermal effects are incorporated to represent the temperature cycling characteristic of [...]