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Modeling of Mismatch and Across-Chip Variations in Compact Device Models

Lu N., IBM, US
For analog circuit designers, both reducing device mismatch and having a good device mismatch model are very important. Pelgrom characterized device mismatch between two devices separated by a finite distance D as sqrt[a^2/(W*L) + b^2*D^2]. [...]

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US
Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Analytical Solution of Surface Potential for Un-Doped Surrounding-Gate MOSFET

Dey A., DasGupta A., Arizona State University, US
Surrounding-Gate MOS transistors are seen as viable slternative to the problems of bulk MOSFET in deep sub-micron region. However modeling of drain current and capacitances, like other MOS structures require solution of an implicit equation. [...]

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US
The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS

Deng Y., Rupani R.A., Johnson J., Springer S., IBM, US
The gate leakage, floating body effect, and history effect in 32nm HKMG PD-SOI CMOS have been extensively studied and analyzed. Based on the measured data, a comprehensive HKMG PD-SOI gate leakage model has been developed [...]

Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond

Wang H., Williams R., Wagner L., Johnson J., Hyde P., Springer S., IBM, US
Gate Induced Drain Leakage (GIDL) current is one of the most important leakage components in Silicon-on-Insulator (SOI) MOSFET devices. The effect of GIDL current reported before mainly focused on device characteristics in the OFF-state or [...]

Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels

Jie B.B., Sah C-T, Univesity of Florida, US
Bipolar MOSFETs with a pure base and two MOS gates usually have electrically short channels compared with its intrinsic Debye length of about 25μm at room temperatures. This short channel effect was missed by all [...]

Carboxylation of Boron- and Nitrogen-Doped Graphene and Carbon Nanotubes: First Principles Study

Al-Aqtash N., Vasiliev I., New Mexico State University, US
We study the mechanism of covalent functionalization of boron (B) and nitrogen (N) doped graphene and carbon nanotubes by carboxyl (COOH) groups. Our calculations are carried out using density functional theory combined with the generalized [...]

SugarCube: An Online Tool for Investigating the Performance of Ready-Made Parameterized MEMS

Marepalli P., Clark J.V., Purdue University, US
We present an online tool - SugarCube which facilitates the parameterization of ready-made MEMS. Using this tool one can investigate the performance of parameterized MEMS which are available in the form of hierarchical libraries. This [...]

Analysis and Simulation of Curved Bimorph Microactuators

Pal S., Xie H., University of Florida, US
Difference in strains in the two layers of a bimorph causes it to curl, thereby leading to actuation. Thermal, piezoelectric and shape-memory alloy based straight bimorph actuators have been widely reported. However, little attention has [...]

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