SG – Page 5 – TechConnect Briefs

Gels of Carbon Nanotubes and Nonionic Surfactant and High-quality Carbon Nanotube Films Prepared by Gel Coating

Ouyang J., National University of Singapore, SG

Processing of large-scale carbon nanotubes (CNTs) are very important for the application of CNTs in various aspects. Here, we report CNT gels by dispersing CNTs in various nonionic surfactants. High-quality CNT films were prepared by [...]

A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs

Lin S., Zhou X., See G.H., Zhu G., Wei C., Zhang J., Chen Z., Nanyang Technological University, SG

Gate-All-Around (GAA), or surrounding-gate, MOSFET is one of the most promising structures beyond bulk CMOS. In this paper, we present a simple, accurate C-V model of undoped silicon nanowire MOSFETs. Different with other models, proposed [...]

1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG

1/f noise model of long channel lightly-doped FinFET biased in weak inversion has been described using Hooge’s theory. From the drain current equation and the channel conductance expression, the total number of carriers under the [...]

Compact Model Application to Statistical/Probabilistic Technology Variations

Zhou X., Zhu G., Srikanth M., Selvakumar R., Yan Y., Chandra W., Zhang J., Lin S., Wei C., Chen Z., Nanyang Technological University, SG

ULSI systems are designed by electronic design automation (EDA) tools with performance figures-of-merit (FOM) measured by SPICE circuit simulation, in which nonlinear transistors are modeled by the compact model (CM) with its nominal set of [...]

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Zhu G.J., Zhou X., See G.H., Lin S-H, Wei C.Q., Zhang J.B., Nanyang Technological University, SG

A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact [...]

Interface Traps in Surface-Potential-Based MOSFET Models

Chen Z., Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Nanyang Technological University, SG

Surface or interface properties along the surface channel region have great influences on the MOSFET characteristics. The interface-trap density increases during the repeated program-erase cycling of non-volatile floating-gate and SONOS memory transistors. Thus, the compact [...]

A Hydrophobicity Controlled Nanofluidic Pump

Liu H., Dharmatilleke S., Tay A.A.O., Institute of Materials Research and Engineering, SG

interfacial energies in the system. Many methods for modulation of surface tension to manipulate fluids in micro or nano scale have been studied and reported, including the mechanical (surface roughness effect), chemical (electrochemical effect), opto- [...]

Using Nanoparticles and Carbon Nanotubes to Enhance the Properties of a Lead-free Solder

Nai S.M.L., Han Y.D., Jing H.Y., Tan C.M., Wei J., Gupta M., Singapore Institute of Manufacturing Technology, SG

Solders are used in various levels of electronic assembly sequence, whereby good electrical, thermal and mechanical performances of solder are necessary. With miniaturization of devices, diverse functional requirements and ever-stricter operating environments of devices, the [...]

Immobilization of Enzymes on Functionalized Magnetic Nanoparticles for Efficient Biocatalysis

Wang D.I.C., Wang W., Li Z., Wang D.I.C., Wang W., National University of Singapore, SG

In this paper, iron oxide magnetic nanoparticles were synthesized by co-precipitation method and were functionalized with aldehyde group. Spherical superparamagnetic nanoparticles with diameter of 100 nm were obtained based on the results of field emission [...]

High dielectric tunability of Ba0.6Sr0.4TiO3 thin film deposited by radio-frequency sputtering

Zuyong F., Nanyang Technological University, SG

Recently, the nonlinear dielectric property of BST thin films has been investigated for the development of frequency agile RF and highper formance microwave tunable devices, which include phase shifters, tunable filters, steerable antennas, varactors, and [...]