SG – Page 15 – TechConnect Briefs

A Simplified Approach for Noise Parameter Transformation Between Common Emitter and Common Base InP DHBT

Xiong Y.Z., Ng G.I., Wang H., Tan C.L., Yang H., Nanyang Technological University, SG

A new approach, based on the typical T-model of InP DHBT, has been developed which uses only a simple set of formulas to transform noise parameters between common emitter and common base configurations. The calculated [...]

Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET’s

Chiah S.B., Zhou X., Lim K.Y., Wang Y., See A., Chan L., Nanyang Technological University, SG

A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the [...]

A Scalable RF Model of the Metal-Oxide-Metal (MOM) Capacitor

Chunqi G., Manh Anh D., Zheng Z., Boyland F., Chartered Semiconductor Manufacturing Ltd., SG

An accurate, scalable RF subcircuit model is presented for Metal-Oxide-Metal (MOM) capacitor. Polynomial equations are used to describe the relation between the value of each subcircuit component and the area of MOM capacitor. The model [...]

An Accurate Photodiode Model for DC and High Frequency SPICE Circuit Simulation

Swe T.N., Yeo K.S., Nanyang Technological University, SG

An accurate photodiode model for DC as well as high frequency SPICE circuit simulation is presented in this paper. The accuracy of the proposed model is verified with the measured data obtained from two different [...]

Modeling and Simulation of a Single Crystal Silicon Microactuator for Hard Disk Drives

Jianqiang M., Shixin C., Yi L., Data Storage Institute, SG

The modeling and simulation of a single crystal silicon microactuator for high-density hard disk drives are described in this paper. The microactuator is fabricated by LISA process, which has an electrically isolated structure directly from [...]

Development of Patterned SMA Strips as Self-Heating Resistors

Chen J., Cheng X.L., Cai B.C., Xu D., Wang L., Cheng X.L., Shanghai Jiao Tong University, SG

A way to develop the pattern of shape memory alloys (SMA) titanium-nickel (TiNi) strips for improving the actuation performance of membrane microactuator is described in this paper. The patterned SMA strips serve not only as [...]

Thermal Frequency Drift of Resonant Microsensor

Shen F., Lu P., O'Shea S.J., Lee K.H., Pradhan S.C., Ng T.Y., Institute for High Performance Computing, SG

Thermal effects on the resonant frequency drift of a microsensor (a silicon cantilever beam with a gold coating) are studied. Two cases are investigated using analytical methods: uniform temperature distribution and linear temperature distribution along [...]

Simulation and Optimum Design of Finline/Slotted Line Millimeter Wave Antenna

Fu J.S., Ng C.L., Kwang Y., Sia E.K., Tan S.H., Nanyang Technological University, SG

Simulations are carried out using XFDTD software to determine the set of input values for several parameters of the fin line antenna, to give an optimized radiation performance in the principal planes. A further modification [...]

Antiphase Design for Balanced Oscillators

Liu X., Sheng Z., Law C.L., Qian C., Sun Z., Nanyang Technological University, SG

A novel general design method, which is based on S-parameters and suitable for MMIC and MEMS, has been developed for antiphase balanced oscillators in this paper. To demostrate the design method, a new type of [...]

Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET’s

Zhou X., Lim K.Y., Nanyang Technological University, SG

A simple, empirically-based method is developed for extraction of submicron surface-channel MOSFET’s effective channel length (Leff) with critical-dimension correction to poly-gate length (Lg) and correlation to metallurgical channel length (Lmet). A self-consistent compact model for [...]