SG – Page 16 – TechConnect Briefs

Numerical Simulation of Pulse-Width-Modulated Micropumps with Diffuser/Nozzle Elements

Nguyen N-T., Huang X., Nanyang Technological University, SG

This paper presents the numerical simulation of a new control method for dynamic micropumps with diffuser/nozzle elements: the pulse-width-modulation (PWM) of the drive signal. A piezo disk with a square wave signal actuates the pump, [...]

Dynamic Analysis of an Electrostatic Micropump

Jiang T.Y., Ng T.Y., Lam K.Y., National University of Singapore, SG

In this paper, a micropump actuated by electrostatic force is dynamically analysed. Mathematical model is established to evaluate the dynamic response of the micropump. Electro-mechanical coupling effect is considered in evaluating the electrostatic force applied [...]

Optimal Design of A Tuning Fork Gyroscope and Its Testing Experiment

Dong Y., Tay F.E.H., Wen Y., Yuan X., Chen W.T., National University of Singapore, SG

The eigenfrequency of a MEMS Tuning Fork Gyroscope (TFG) is calculated using a formula derived from Rayleigh method. From this formula, the objective function for the optimal design is established. Then two methods to solve [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]

Modelling of the “Gated-Diode” Configuration in Bulk MOSFET’s

Yip A., Yeow Y.T., Samudra G.S., Ling C.H., TECH Semiconductor, SG

A study of the “gated-diode” configuration in MOSFET’s for characterising hot-carrier degradation by employing 2-D simulations is presented in this paper. We use both process and device simulations to understand operational sensitivity of this technique. [...]

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

Zhou X., Lim K.Y., Nanyang Technological University, SG

This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements

Rao R.V.V.V.J., Joe J., Chia Y.W.M., Ang K.S., Wang H., Ng G.I., National University of Singapore, SG

A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]

Electrostatic Spring Effect on the Dynamic Performance of Micro Resonators

Francis E.H., Kumaran R., Chua B.L., Logeeswaran V.J., National University of Singapore, SG

This paper reports on the significant discrepancy between the analytical and experimental resonant frequencies of the folded beam micro resonators. Experimental results for the resonant frequency showed a consistent 20% discrepancy over theoretical and finite [...]