CN – Page 12 – TechConnect Briefs

Model the AlGaN/GaN High Electron Mobility Transistors

Wang Y., Tsnghua University, CN

We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and [...]

Research on Non-linear Vibration in Micro-machined Resonant Accelerometer

Shuming Z., Yunfeng L., Fan W., Jingxin D., Tsinghua University, CN

This paper analyses the non-linear vibration of the Silicon Oscillating Accelerometer (SOA) by system modeling and simulation, and the optimization designation to weaken the influence of the nonlinear vibration are proposed. With the decreasing of [...]

A Numerical Study on THZ-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-effect Transistor

Wang C., Mou X., He H., He J., Ye Y., He H., He J., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with [...]

Experimental analysis of the MEMS Capacitive accelerometer’s shock resistibility

Tao Y., Liu Y., Dong J., Tsinghua University, CN

The shock resistibility of MEMS device has been an urgent issue in the field of consumer electronics, automotive industry and special military applications. The paper analyses experimentally the shock resistibility of a typical MEMS capacitive [...]

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability

He H., He J., Ma C., Wang C., Zhang A., He H., He J., Peking Univeristy, CN

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model [...]

Low-temperature laser sintering of the printed nano-silver electrodes for flexible electronics

Gu W., Lin J., Cui Z., Suzhou Institute of Nanotech, Chinese Academy of Sciences, CN

One of the key components in flexible electronics is the flexible electrode. Currently, the most commonly used printable electrode material is nano-silver ink which contains various additives.These additives, however, increase the electrical resistivity of nano-silver [...]

Research in a Novel Integrated Chip of Safe and Initiation Control

Zhao Y., Lou W-Z, Li D.-G., Beijing Institute of Technology, CN

In this paper, we present a novel integrated chip of safe and initiation control which is used to initiate explosive or as a ignitor in a fuze. In view of the limits on shape and [...]

The Fabrication and Multi-Physics Simulation of a Novel Low Power Electrothermal Bimorph Actuator

Lou W-Z, Guo M-R, Lv Y-J, Beijing Institute of Technology, CN

A novel electrothermal bimorph actuator was designed for low-power (below 300mW), quick-response (below 10ms) switching application. The research work was supported by the Funds for National Key Laboratory (9140C3605101006). Three aspects about the electrothermal bimorph [...]

The field self-calibration method of MEMS gyroscopes and accelerometers for Micro inertial measurement system

Li J.L., Chen A.S., Du M., Beijing University of Aeronautics and Astronautics, CN

The Micro Inertial Measurement System (MIMS) is important equipment for micro aircraft and robot. The biases calibration of MEMS gyroscopes and accelerometers are an effective way to reduce measurement error. In according to error mathematical [...]

Fetal Movement Detection Based on MEMS Accelerometer

Minjie L., Yongkang T., Yunfeng L., Song Y., Jingxin D., Tsinghua University, CN

Fetal movement is a significant indication of fetal well-being. Standard clinical fetal monitoring technologies include ultrasound imaging and cardiotocography. Both have limited prognostic value and require many health resources. We have recently developed a low-cost, [...]