China
Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport
Wang C., Wang H., Wang W., Wang C., Wang H., Wang W., Cao Y., Wang C., Wang H., Wang W., Ye Y., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN
This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability [...]