We propose that Aharonov-Bohm effect can be used for quantum computation. The effect consists of existence of persistent currents in mesoscopic/nanoscopic loops of normal metal or semiconductor in a magnetic field perpendicular to loop. Three-site [...]
There has been growing interest in the physics of quantum dots (QDs) in recent years because of the rapid development of fabrication technology. Most theoretical and experimental studies have been so far focused on the [...]
One of the most novel and powerful emerging nanotechnologies is quantum computing. This paper proposes a design for a parallel random-access memory (RAM) using Quantum-Dot Cellular Automata (QCA). QCA has the potential of becoming the [...]
Boundary roughness scattering in disordered tunnel-coupled double quantum wires in the presence of a magnetic field is considered. The low-temperature conductance as a function of applied magnetic field is calculated for different structure and disorder [...]
The double barrier SINIS junctions (here S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with a nanoscopic N spacer are potentially capable of performing quantum logic operations (so-called qubits) [...]
Classical systems containing decision-making elements can possess quantum-like properties, most importantly interference of probabilities of different decisions. We demonstrate this theoretically using a set of linear numbered oscillators combined with decision-making and other devices. This [...]
In our report we study how the oscillations and reentrant behaviour of critical parameters depends on the elastic scattering of electrons on atomic impurities in S/F multilayers. The expressions for the electric supercurrent and for [...]
We study the induced property of ground and excited state energies of electrons confined in 3D nanostructures that the In_xGa_1-xAs QDs are embedded into GaAs matrix and have a vertically coupled topology. The disk-(DI) and [...]
Regardless of whichever precise nano-device technology ends up being most viable for general-purpose computing, the design of densely-packed computer systems comprised of nanometer-scale bit-devices offers a number of interesting new challenges for the field of [...]
Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]
A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]
A model of an electrical tunnel junction coupled to a mechanical system (oscillator) is studied to simulate the dephasing effect of measurement on a quantum system. The problem is solved at zero temperature under conditions [...]
The output of a quantum computing system depends on the quality of the preparation of the initial state of the qubit or qubits to be used in the subsequent computations. Here, we have defined a [...]
, Asenov, A.
, Brown, A.R.
, Svizhenko, A.
, Watling, J.R.
, University of Glasgow, UK
We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]
In an integrated silicon nanotechnology environment, it may be desirable to replace metallic inter-connects like Al, with Silicon metallic wires. This motivated us to investigate the electronic and transport properties of quasi one-dimensional (1D) Silicon [...]
Recently, quantum computing has gained attention as a possible means of greatly increasing the speed of certain calculations when compared with traditional, binary computing. A key part of many quantum computing algorithms is the performance [...]
, Balandin, A.
, Fedoseyev, A.
, Kolobov, V.
, Przekwas, A.
, CFD Research Corporation, US
The progress in LSI technologies has resulted in scaling down semiconductor devices to nano-scale dimensions where kinetic and quantum effects in the carrier transport become crucial for the device performance. The transistor counts on the [...]
A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]
We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]
We perform a many-body investigation of the spin diffusion/transport in an n-doped GaAs QW based on a set of many-body kinetic transport equations. These equations are derived for the spatial inhomogeneous system by using nonequilibrium [...]
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems