## Papers:

### Quantum Computation with Persistent-current Aharonov-Bohm Qubits and Qugates

We propose that Aharonov-Bohm effect can be used for quantum computation. The effect consists of existence of persistent currents in mesoscopic/nanoscopic loops of normal metal or semiconductor in a magnetic field perpendicular to loop. Three-site [...]

### Transition of the Ground State in a Coupled N-layer Quantum Dot

There has been growing interest in the physics of quantum dots (QDs) in recent years because of the rapid development of fabrication technology. Most theoretical and experimental studies have been so far focused on the [...]

### RAM Design Using Quantum-Dot Cellular Automata

One of the most novel and powerful emerging nanotechnologies is quantum computing. This paper proposes a design for a parallel random-access memory (RAM) using Quantum-Dot Cellular Automata (QCA). QCA has the potential of becoming the [...]

### Conductance of a Disordered Double Quantum Wire in a Magnetic Field: Boundary roughness scattering

Boundary roughness scattering in disordered tunnel-coupled double quantum wires in the presence of a magnetic field is considered. The low-temperature conductance as a function of applied magnetic field is calculated for different structure and disorder [...]

### Switching Dynamics of Double Barrier Josephson Junction Based Qubit Gate

The double barrier SINIS junctions (here S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with a nanoscopic N spacer are potentially capable of performing quantum logic operations (so-called qubits) [...]

### Quantum-like Computation and “Thinking” Based on Classical Oscillations

Classical systems containing decision-making elements can possess quantum-like properties, most importantly interference of probabilities of different decisions. We demonstrate this theoretically using a set of linear numbered oscillators combined with decision-making and other devices. This [...]

### Critical Current Oscillations versus Pureness of Superconductor-ferromagnet Nanoscopic Multilayers

In our report we study how the oscillations and reentrant behaviour of critical parameters depends on the elastic scattering of electrons on atomic impurities in S/F multilayers. The expressions for the electric supercurrent and for [...]

### A Computational Investigation of Electron Energy States for Vertically Coupled Semiconductor Quantum Dots

We study the induced property of ground and excited state energies of electrons confined in 3D nanostructures that the In_xGa_1-xAs QDs are embedded into GaAs matrix and have a vertically coupled topology. The disk-(DI) and [...]

### Nanocomputer Systems Engineering

Regardless of whichever precise nano-device technology ends up being most viable for general-purpose computing, the design of densely-packed computer systems comprised of nanometer-scale bit-devices offers a number of interesting new challenges for the field of [...]

### Strain Effect on the Final State Density-of-State for Hole Scattering in Silicon

Recently, strained-Si on Si1-xGe_x subtrate attracts considerable attention so as to enhance the carrier mobility in MOSFETs. The hole transport mechanism, however, has no been completely understood yet. The most important problem this mechanism is [...]

### Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering

A Quantum Monte Carlo (QMC) method taking into account both interference and dissipation effects is presented. The method solves the space-dependent Wigner equation which includes semi-classical scattering via the Boltzmann collision operator. The classical force [...]

### Quantum-Classical Transition Induced by Electrical Measurement

A model of an electrical tunnel junction coupled to a mechanical system (oscillator) is studied to simulate the dephasing effect of measurement on a quantum system. The problem is solved at zero temperature under conditions [...]

### Initial State Preparation and Stability in Narrow Band-Gap Semiconductor Qubits

The output of a quantum computing system depends on the quality of the preparation of the initial state of the qubit or qubits to be used in the subsequent computations. Here, we have defined a [...]

### Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain [...]

### Electronic Properties and Transport in Silicon Nanowires

In an integrated silicon nanotechnology environment, it may be desirable to replace metallic inter-connects like Al, with Silicon metallic wires. This motivated us to investigate the electronic and transport properties of quasi one-dimensional (1D) Silicon [...]

### A Quantum Waveguide Array Generator For Performing Fourier Transforms

Recently, quantum computing has gained attention as a possible means of greatly increasing the speed of certain calculations when compared with traditional, binary computing. A key part of many quantum computing algorithms is the performance [...]

### Quantum and Kinetic Simulation Tools for Nano-scale Electronic Devices

Arslanbekov, R., Balandin, A., Fedoseyev, A., Kolobov, V., Przekwas, A.,

*CFD Research Corporation, US*The progress in LSI technologies has resulted in scaling down semiconductor devices to nano-scale dimensions where kinetic and quantum effects in the carrier transport become crucial for the device performance. The transistor counts on the [...]

### Quantum mechanical effects correction models for inversion charge and I-V characteristics of the MOSFET device

A 1-dimensional analytic quantum mechanical effects correction formula for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (DG) model using matched asymptotic expansion techniques. The primary theoretical framework for this [...]

### Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in [...]

### Theory of Spin Transport in an n-typed GaAs Quantum Well

We perform a many-body investigation of the spin diffusion/transport in an n-doped GaAs QW based on a set of many-body kinetic transport equations. These equations are derived for the spatial inhomogeneous system by using nonequilibrium [...]

Journal: TechConnect Briefs

Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Published: February 23, 2003

Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics

Topics: Modeling & Simulation of Microsystems

ISBN: 0-9728422-1-7