Chicago Semiconductor achieved a breakthrough in fabricating two-dimensional layers of Arsenene and Silicene. This was realized for uniform deposition of Arsenic-on-Silicon(112) and Silicene on Silicon (112). The key to stable and uniform Arsenene-on-Silicon (AeOS) and [...]
In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]
In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]
In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut [...]
In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]
Today, Si-based flash memory devices represent the most prominent nonvolatile data memory (NVM) because of high density and low fabrication costs. However, they suffer from low endurance, low write speed, and high voltages required for [...]
Circadian Rhythm (CRR) dysfunction of Alzheimer’s has been recognized as an early sign in correlation with -Amyloid (A) damage late happened in the brain. We report a nanostructured memcapacitor memory device for detecting an energy [...]
We have used single-wall carbon nanotube (SWCNT)/molecule heterojunctions to fabricate quantum structures. In one example, three different SWCNTs were connected in series with collagen model peptide molecules between them. We expect the molecule work as [...]
The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]
Presenting novel designs for a Ripple Carry Adder, a Subtractor, and a Pipelined Array Multiplier using the Five-input Majority Gate (MAJ5) in Quantum-dor Cellular Automata (QCA). These designs are then used to implement the Fast [...]
Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current [...]
Recently, junctionless transistors (JLT) have attracted the attention of researchers due to simple fabrication flow and reduced short channel effects. Further, due to better gate control double gate JLT (DGJLT) seems to be a promising [...]
, Jawake A.V.
, Aher S.R.
, Bhosale K.S.
, Patil G.C.
, Patil S.R.
, Patil G.C.
, Patil S.R.
, Bormane D.S.
, JSPM’s Rajarshi Shahu College of Engineering, IN
Junctionless transistor (JLT) attracts the researchers due to its advantages over conventional MOSFET’s namely high scalability, simple process flow, and low thermal budget. However, scaling of JLT below 20 nm regime results increase in off [...]
Amyloid-beta (A) plaque accumulation in the brain has been recognized to be associated with Alzheimer’s. Using artificial neuronal devices under controlled conditions, step-by-steps mimicking the A damages to neuronal circuitry is desirable, because of convenience [...]
Scanning probe microscopes (SPMs) have remarkable sensitivity to the surface. The atomic force microscope (AFM) can measure surface topography and the scanning tunneling microscope (STM) can interrogate the electrical density of states, both with atomic [...]
The modeling and simulation of electromagnetic phenomena can be useful in modern ICs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while [...]
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics