Papers:
Arsenene Substrates Enable a New Era of High-Performance Semiconductors
Chicago Semiconductor achieved a breakthrough in fabricating two-dimensional layers of Arsenene and Silicene. This was realized for uniform deposition of Arsenic-on-Silicon(112) and Silicene on Silicon (112). The key to stable and uniform Arsenene-on-Silicon (AeOS) and [...]
TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications
In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]
TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET
In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]
TCAD Analysis of Small Signal Parameters and RF Performance of Heterogeneous Gate Dielectric-Gate All Around Tunnel FET
In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut [...]
Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications
In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]
Memristor fabrication and characterization based on TiO2
Today, Si-based flash memory devices represent the most prominent nonvolatile data memory (NVM) because of high density and low fabrication costs. However, they suffer from low endurance, low write speed, and high voltages required for [...]
Nanobiomimetic Memcapacitor Memory Devices Identify Circadian Rhythm Dysfunction and Predict Early Signs of “Epilepsy” Using Reentrant Energy-Sensory Images
Circadian Rhythm (CRR) dysfunction of Alzheimer’s has been recognized as an early sign in correlation with -Amyloid (A) damage late happened in the brain. We report a nanostructured memcapacitor memory device for detecting an energy [...]
Fabrication and characterization of quantum dots with carbon nanotube-molecule heterojunctions
We have used single-wall carbon nanotube (SWCNT)/molecule heterojunctions to fabricate quantum structures. In one example, three different SWCNTs were connected in series with collagen model peptide molecules between them. We expect the molecule work as [...]
Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET
Bhosale K.S., Jawake A.V., Aher S.R., Borse H.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN
The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]
Optimized FFT QCA Implementation using Five-input Majority Gate
Presenting novel designs for a Ripple Carry Adder, a Subtractor, and a Pipelined Array Multiplier using the Five-input Majority Gate (MAJ5) in Quantum-dor Cellular Automata (QCA). These designs are then used to implement the Fast [...]
A Novel GaAs-on-Si MOSFET for Analog Integrated Circuits
Jawake A.V., Aher S.R., Borse H.S., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN
Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current [...]
A Novel Dual-K Spacer Double Gate Junctionless Transistor for Digital Integrated Circuits
Patil G.C., Patil S.R., Patil G.C., Patil S.R., Borse H.S., Bhosale K.S., Jawake A.V., Aher S.R., JSPM’s Rajarshi Shahu College of Engineering, IN
Recently, junctionless transistors (JLT) have attracted the attention of researchers due to simple fabrication flow and reduced short channel effects. Further, due to better gate control double gate JLT (DGJLT) seems to be a promising [...]
Impact of High-k gate oxide on intrinsic device Performance of Junctionless Transistor (JLT)
Borse H.S., Jawake A.V., Aher S.R., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., Bormane D.S., JSPM’s Rajarshi Shahu College of Engineering, IN
Junctionless transistor (JLT) attracts the researchers due to its advantages over conventional MOSFET’s namely high scalability, simple process flow, and low thermal budget. However, scaling of JLT below 20 nm regime results increase in off [...]
Acetylcholine Repairs the Amyloid-beta Damage on Brain Circuitry and Memory Loss From a “Mutated Biomimetic Acetylcholinesterase” Neuronal Memcapacitor During Slow-Wave Sleeping
Amyloid-beta (A) plaque accumulation in the brain has been recognized to be associated with Alzheimer’s. Using artificial neuronal devices under controlled conditions, step-by-steps mimicking the A damages to neuronal circuitry is desirable, because of convenience [...]
Nanoelectronic Structural Information with Scanning Probe Microscopes
Scanning probe microscopes (SPMs) have remarkable sensitivity to the surface. The atomic force microscope (AFM) can measure surface topography and the scanning tunneling microscope (STM) can interrogate the electrical density of states, both with atomic [...]
Modeling of Electromagnetic Phenomena Inside Modern Integrated Semiconductor Structures
Zubert M., Jankowski M., S. Nowak P., Raszkowski T., Samson A., Napieralski A., Lodz University of Technology, PL
The modeling and simulation of electromagnetic phenomena can be useful in modern ICs. This is an important issue, because of the direction of development of new semiconductor technologies. The distance between devices constantly decreases, while [...]
Journal: TechConnect Briefs
Volume: 4, Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015
Published: June 14, 2015
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoelectronics
ISBN: 978-1-4987-4730-1