In this paper we report chemical synthesis, device fabrication, and device physics investigation of 1-D single-crystalline nanowire field-effect transistor (SNW-FET) for logic and memory applications. Wafer-scale transistor arrays were fabricated with semiconducting nanowires serve as active channel (for logic) or signal read-out route (for memory). It is demonstrated that the single-crystal nanowire transistor, due to its unique structural features, can be served for high on-off ratio logic switching with superior scalability and data storaging. Device physics study is presented, focusing on ambipolar channel conducting, subthreshold behavior, parasitic resistance, carrier mobility, low-barrier metal-semiconductor Schottky junctions, and performance figure-of-merit analysis. The feasibility of extending the bottom-up fabricated nanowire transistors into sub-10nm CMOS technology is evaluated.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Pages: 232 - 235
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics