Characterization, Parameter Extraction, Calibration

Auto-Regressive Time Series Modeling of Stochastic Surfaces

Rao B.N.P., Murti V.S.R., Osmania University, IN

Roughness profiles of EDM surfaces were obtained from a perthometer and digitized through AUTO CAD. Fortran program was developed for fitting ARMA (n, n-1) models. A significant observation was that for the sinking electrode type. [...]

Atomic Force Microscopic Visualization of Identical Site on Cell Surface with Different Probes

Ohta Y., Kobayashi T., Okamoto H., Okuda T., Toyo University, JP

For these several years Atomic Force Microscopy (AFM) has been widely used for visualization of biological samples with high resolution on nanometer scale. Whereas any biological information regarding specific reactions, such as immunological function, cannot [...]

Modelling of Processes of Photoacoustic Diagnostic with Piezoelectric Detection

Vertsanova O., Perlov I., Tsyganok B., National Technical University of Ukraine, UA

Authors developed the one-dimensional mathematical model of piezoelectric detection of photoacoustic effect in thermally thick and optically opaque sample with subsurface defect. The model is developed in view of the assumptions of ideally rigid connection [...]

Finite-Element Modeling of 3C-SiC Membranes

DeAnna R.G., Mitchell J., Zorman C.A., Mehregany M., U.S. Army Research Laboratory, US

Finite-element modeling (FEM) of 3C-SiC thin-film membranes on Si substrates was used to determine the residual stress and center deflection with applied pressure. The anisotropic, three-dimensional model includes the entire 3C-SiC membrane and Si substrate [...]

Vision-based Extraction of Geometry and Forces from Fabricated Micro Devices

Wang X., Ananthasuresh G.K., Ostrowski J.P., University of Pennsylvania, US

In the field of micro-electromechanical systems (MEMS), there are often times when a model derived directly from the microstructure of a fabricated device would be useful. In our research, the image of the structure is [...]

Modeling of Acoustic-Structural Coupling in a MEMS Hydrophone

Johnson H.T., Prevot L., Boston University, US

The coupling of acoustics and structural dynamics is of primary importance in the design of MEMS based microphones for use in liquid environments. A three-dimensional finite element study of acoustic-structural coupling is presented here for [...]

Design, Simulation and Fabrication of a Bridge Structure Microtransducer

Zanga M., Zurn S.M., Polla D.L., Nelson B.J., Robbins W.P., University of Minnesota, US

ANSYS simulation of a variety of microtransducers was performed. The results indicate that a bridge structure is an optimal design for a microtransducer. Simulation of a bridge structure PZT thin film microtransducer was verified by [...]

Topics in Finite-Element Modeling of Piezoelectric MEMS Devices

von Preissig F.J., Kim E.S., University of Hawaii at Manoa, US

Techniques for modeling thin-piezoelectric MEMS devices using existing finite-element packages are examined. The emphasis is on non-resonant sensors and actuators, but most results are applicable to resonant devices and large structures as well. Characteristic features [...]

Torsional Ratcheting Actuating System

Barnes S.M., Miller S.L., Rodgers M.S., Bitsie F., Sandia National Laboratories, US

A new type of surface micromachined ratcheting actuation system has been developed at the Microelectronics Development Laboratory at Sandia National Laboratories. The actuator uses a torsional electrostatic comb drive that is coupled to an external [...]

Calculation of the AC Electroquasistatic Sinusoidal Steady-State Coulomb Force on a Conductor Coated with a Lossy Dielectric

Osterberg P., Inan A., University of Portland, US

The ability to directly calculate the analytical closed-form electroquasistatic sinusoidal steady-state Coulomb force (or ac force) exerted on a conductor coated with a lossy dielectric in the presence of a second grounded conductor and excited [...]

Analysis of an Electrostatic Microactuator with the Help of Matlab/Simulink: Transient and Frequency Characteristics

, ELMI, FR

The article is focused on the development of a numeric simulator dedicated to the electrostatic microactuator. It's based on the use of Simulink (Matlab „). The electrostatic microactuator is regard as a model <> associated [...]

Resonant-Type Micro-Probe for Vertical Profiler

Lebrasseaur E., Bourouina T., Pourcie J-B., Ozaki M., Masuzawa T., Fujita H., LIMMS/CNRS-IIS, JP

We present a characterization method, which is dedicated to the measurement of the inner dimensions of high aspect ratio micro-holes, typically 100mm in diameter and 1mm in depth. Micro-probes with an integrated force-sensitive element are [...]

Automatic Differentiation Technique in Device Model Parameter Extraction

Cheng B., Shao Z., Wang L., Tang T., Yu Z., Xi'an Jiaotong University, CN

Automatic Differentiation (AD), based on the nonstandard analysis theory, is a new technique in computer numerical analysis. An AD based algorithm for device model parameter extraction is presented. Using this algorithm, the constrained parameter extraction [...]

Triboelectromagnetic Phenomena at a Simulated Material Combination of a Head/Magnetic-Recording-Disk

Nakayama K., Mechanical Engineering Laboratory, JP

The head slider of a magnetic recording apparatus is currently covered with a diamond like carbon (DLC) film, while the magnetic recording layer of the disk is overcoated with hydrogenated carbon film (HCF). The head [...]

3D Thermo-Electro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

Lu C-C., Setiadi D., Udrea F., Milne W.I., Covington J.A., Gardner J.W., Cambridge University, UK

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]

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