Characterization and Parameter Extraction

Papers:

The Modeling and Characterization of Nano-Scale MOSFET Resistance

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It has been reported that both the shallow junction and the heavily doped extension as the methods to minimize the off-current and to stabilize the on-current of the sub-90nm scaled device, can solve the short-channel [...]

Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 8, 2005
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9767985-2-2