Papers – Page 6 – TechConnect Briefs

Memristor fabrication and characterization based on TiO2

Diamanti M.V., Pisoni R., Cologni A., Corinto F., Pedeferri M.P., Politecnico di Milano, IT

Today, Si-based flash memory devices represent the most prominent nonvolatile data memory (NVM) because of high density and low fabrication costs. However, they suffer from low endurance, low write speed, and high voltages required for [...]

Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications

Kumar A., Gupta N., Chaujar R., Delhi Technological University, IN

In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]

TCAD Analysis of Small Signal Parameters and RF Performance of Heterogeneous Gate Dielectric-Gate All Around Tunnel FET

Madan J., Gupta R.S., Chaujar R., Delhi Technological University, IN

In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut [...]

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]

Arsenene Substrates Enable a New Era of High-Performance Semiconductors

Zavitz D., Kubricky J., CSI2D, US

Chicago Semiconductor achieved a breakthrough in fabricating two-dimensional layers of Arsenene and Silicene. This was realized for uniform deposition of Arsenic-on-Silicon(112) and Silicene on Silicon (112). The key to stable and uniform Arsenene-on-Silicon (AeOS) and [...]

Effect of circular dichroism in chiral photonic crystal liquid with enclosed defect layer inside

Gevorgyan A.H., Kocharian A.N., Vardanyan G.A., California State University Los Angeles, US

The photonic crystals of artificial and self-organizing structures with spatial periodic changes in dielectric and magnetic properties have attracted considerable interest recently due to unusual physical properties and wide practical applications. The chiral periodic structure [...]

The effects of confining cup-like and hill-like parabolic electric potentials on the photoionization cross section in a spheroidal quantum dot

Tshipa M., University of Botswana, BW

A theoretical investigation of the effects of the hill-like and the cup-like parabolic electric confining potentials on the photoionization cross section (PCS) in a spheroidal quantum dot are presented. The cup-like parabolic potential intensifies, the [...]

Glass-Ceramic Scintillators for High-Resolution Medical Imaging

Beckert M.B., Nadler J.H., Kang Z., Wagner B.K., Georgia Tech Research Institute, US

Screens made from micron-sized phosphor particles (such as Gd2O2S:Tb) are efficient and bright X-ray converters used in medical imaging systems. However, the large size of the phosphor particles causes the screen to be opaque and, [...]

Structural and Luminescent properties of Europium benzene-1,3,5-tricarboxylate

Alejandre-Zuniga B.Y., Loera-Serna S., Medina-Velazquez D.Y., Universidad Autonoma Metropolitana-Azcapotzalco, MX

The increasing demand of optoelectronic devices requires the development of luminescent materials with high luminescence quantum efficiency and reduced energy consumption, to this organic matrix materials doped with rare earths offer an great alternative. The [...]