Papers – Page 54 – TechConnect Briefs

Growth and investigations on Fe/MgO/Fe magnetic tunnel junctions fabricated by dual ion beam sputtering technique

Singh B., Gupta P., Chaudhary S., Pandya D.K., Kashyap S.C., Inidan Institute of Technology Delhi, IN

The experimental observation of Tunnel Magnetoresistance (TMR) in 1996 by Moodera’s group of MIT has triggered intensive efforts worldwide to fabricate and investigate the magnetoresistive junctions showing a TMR effect. While in past 3-4 years, [...]

Optical properties of silicon nanoparticles: Influence of etching, surface oxidation and surface functionalization

Gupta A., Kluge S., Schulz C., Wiggers H., Universität Duisburg-Essen, DE

In this study, we investigated the properties of Si-NPs after surface etching, surface re-oxidation and surface functionalization processes. Surface etching of as-synthesized Si-NPs with hydrofluoric acid causes a blue shift compared to their initial emission [...]

Stable Light Emiting Electrochemical Cells Based in Supramolecular Interactions

Costa R.D., Lenes M., Ortí E., Bolink H.J., Graber S., Constable E.C., University of Valencia, ES

We will present a breakthrough in the stability of the simplest type of molecular electroluminescent devices, light-emitting electrochemical cells (LEECs). The main drawback of these molecular devices limiting their practical use is their short lifetimes [...]

Self – Heating Effects in Nanowire Transistors

Hossain A., Raleva K., Vasileska D., Goodnick S.M., Arizona State University, US

We investigate the role of self-heating effects on the electrical characteristics of a silicon nanowire transistor using a 3-D Monte Carlo device simulator that includes self-consistent solution of the energy balance equations for both acoustic [...]

Jet-printed Si nanowires for flexible backplane applications

Wong W.S., Raychaudhuri S., Sambandan S., Lujan R., Street R.A., Palo Alto Research Center, US

The integration of Si nanowire (Si NW) materials with low-temperature plastic substrates can enhance the performance of low-cost flexible electronics. We report the properties of Si NW field-effect transistors (FETs) fabricated with various contact metals [...]

Atomistic Simulations of Electronic Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots

Yalavarthi K., Gaddipati V., Ahmed S., Southern Illinois University at Carbondale, US

In this work, within a fully atomistic framework, we investigate the electronic structure of wurtzite InN quantum dots self-assembled on GaN substrates. The main objectives are two-fold: (1) to explore the origin, nature and the [...]

Critical currents in graphene ribbon Josephson junctions

Gabrielli P.G., ENEA, IT

Most of the remarkable transport properties of graphene have to do with its particular band structure at low energies: the undoped system has a finite number of Fermi points, placed at the corner of the [...]

Enhancement of Defect Tolerance in the QCA-based Programmable Logic Array (PLA)

Notsu T., Miura K., Nakamae K., Osaka University, JP

In this study we analyze the precedent AND/OR plane cell of a programmable logic array (PLA) based on the quantum-dot cellular automata (QCA), then propose a modified layout that has better defect tolerance. We analyzed [...]

Neighbouring Levels Statistic and Shape of Quantum Dots: Si/Sio2

Filikhin I., Matinyan S.G., Vlahovic B., North Carolina Central University, US

We model the Si quantum dots (QDs) embedded into the SiO2 substrate. Single sub-band effective mass approach is used to calculate energy levels of electrons and heavy holes. For weak confinement regime (QD size D [...]

Comprehensive Examination of Intrinsic-Parameter-Induced Characteristic Fluctuations in 16-nm-Gate CMOS Devices

Han M-H, Li Y., National Chiao Tung University, TW

In this work, the intrinsic device parameter variability including the metal gate workfunction fluctuation (WKF), the process variation effect (PVE), and the random dopant fluctuation (RDF) in 16-nm-gate n-type MOSFETs (NMOS) and p-type MOSFETs (PMOS) [...]