Papers – Page 53 – TechConnect Briefs

Iron based 1D Nanostructures by Electrospinning Process

Eid C., Brioude A., Salles V., Plenet J.-C., Asmar R., Monteil Y., Khoury A., Khoury R., Khoury A., Khoury R., Miele P., Université Claude Bernard-Lyon 1, FR

Due to their strong shape anisotropy, one-dimensional (1D) nanomaterials, including nanotubes, nanowires and nanofibers exhibit specific properties that are not observed in the case of their bulk or particle counterparts.1 Moreover, when such nanomaterials display [...]

Visible Room Temperature Photoluminescence in Wet-Chemically Etched Silicon Nanowires

Sivakov V.A., Voigt F., Brönstrup G., Bauer G., Christiansen S.H., Institute of Photonic Technology, DE

Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in wet chemically etched heavily (10E19 cm-3) and lowly (10E15 cm-3) doped silicon nanowires (SiNWs). Our observations strongly suggest that visible light emission at room [...]

The Effects of Gamma rays on P-channel MOSFET

Iqbal M.A., Firdous U., Punjab University, PK

The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as threshold voltage, trans-conductance and [...]

A Fan-in Bounded Low Delay Adder for Nanotechnology

Sun Y., Wagh M.D., Lehigh University, US

This paper presents an adder designed specifically for nanoelectronics. It exploits the basic characteristics of nanoelectronic technologies such as the RTD, SET and QCA to provide an adder that has a very low delay and [...]

A New QCA Architecture for the Future of Nano-Scale Computing

Hook IV L.R., Lee S-C, University of Oklahoma, US

By the time CMOS reaches its physical scaling limits in the next several years, computing will have very likely evolved to meet the demands imposed with increases in application complexity and the processing of enormous [...]

An Architecture for Designing Noise-Tolerant QCA Nanocircuits

Lee S-C, Hook IV L.R., University of Oklahoma, US

Due to many random factors from thermal fluctuations to wave interference, computation perfection in nanoICs is hard to achieve. Defects and faults arise from noise susceptibility of nanoICs which leads to unreliable results. A probabilistic [...]

Semiconductor nanoparticles in Photocatalysis: The Emerging Art and Perspectives

Sharma A., Sharma R., Sharma A., Sharma R., Sharma A., Sharma R., AKG College of Engineering, UPTU, IN

A principle of semiconductor nanophotocatalysis – a new trend in photochemistry deals with the photocatalytic redox-reactions with the participation of semiconductor nanoparticles. The origin of various size-dependent explanations in the semiconductor photocatalysis are spot light [...]

Effect of temperature and γ rays radiation on the electrical and optical characteristics of Quantum well structure based laser diode

Iqbal M.A., Ghani S., Punjab University, PK

Analysis of effect of temperature in the range (280k-300k) and radiation (X-rays and γ rays) on the AlGaInP based laser at 665nm emission wavelength has been carried out. Before and after irradiation, current-voltage (I-V), light-current [...]

Characteristic Optimization of Single- and Double-Gate Tunneling Field Effect Transistors

Lee K-F, Han M-H, Lo I-S, Yiu C-Y, Li Y., National Chiao Tung University, TW

The simulation results of this study have shown that the device with heavier source doping and shorter effective channel length lead to interesting device performance of TFETs. Such characteristic could be considered for device structure [...]

The Effects of Gamma rays on p-channel MOSFET

Iqbal M.A., Firdous U., Punjab University, PK

The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as Threshold voltage, trans-conductance and [...]