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Home2009May

Month: May 2009

TechConnect Proceedings Papers

A simulation of microfluidic oscillator micromixer

Khelfaoui R., University of Bechar, DZ
Micromixing is particularly interesting for many microfluidic applications. In micrometric size devices, reaching an efficient mixing is often difficult, due to laminarization of the flow. As an example, efficient mixing may be obtained using a [...]

Parameterized Structural Capacitance Behavioral Modeling for TFT-LCD Panel

Huang H.M., Li Y., National Chiao Tung University, TW
Thin film transistors (TFTS) find wide usage in active matrix liquid crystal displays. The basic principle of operation of the LCD panel is to control the transparency of each pixel portion by bus lines to [...]

A Physical Based Hot Carrier Injection Compact Model for Nanoscale FinFET

Ma C., Li B., Lin X., Zhang L., Zhang X., He J., Zhang L., Zhang X., Lin X., Peking University, CN
A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCI) is given in this paper, and a physical based HCI compact model adapted to all the operation modes is presented. [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN
In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN
In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

An Analytic Terahertz Signal Detection Model of Silicon-based Nanowire Gated Field Effect Transistor

He F., Chen Y., Mu X., Lou H., Zhang L., Song Y., SZPKU, CN
In this paper, an analytical terahertz (THz) signal detection model of Silicon-based nanowire MOSFET (NWFET) is proposed. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport [...]

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Martinie S., Jaud M-A, Munteanu D., Thomas O., Le Carval G., Autran J-L, CEA/LETI/MINATEC, FR
The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To [...]

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

Itagaki K., Ueda H., Terao Y., Horio K., Shibaura Institute of Technology, JP
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which a deep donor “EL2” and a shallow acceptor are considered in a semi-insulating substrate, and the results are compared between the two cases with [...]

Determination of droplet shape in digital microfluidic systems using two-dimensional flow analysis

Ahmadi A., Najjaran H., Holzman J.F., Hoorfar M., University of British Columbia Okanagan, CA
A two-dimensional model for fluid flow in a digital microfluidic system is introduced, and the results are compared to experimental data. Resistive flow effects based upon contact line forces, filler effects and shear forces are [...]

A Comparison of Surface Acoustic Wave Modeling Methods

Wilson W.C., Atkinson G.M., NASA Langley Research Center, US
Surface Acoustic Wave (SAW) technology is low cost, rugged, lightweight, extremely low power and can be used to develop passive wireless sensors. For these reasons, NASA is investigating the use of SAW technology for Integrated [...]

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