Papers – Page 13 – TechConnect Briefs

HEMT Optimization by Advanced RSM Models

Profirescu M.D., Dima G., Govoreanu B., Mitrea O., University Politehnica of Bucharest, RO

In this paper, the optimization of heterostructure devices using the Design of Experiments concept and advanced Response Surface Models is presented. As an example, the structural optimization of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8As/GaAs pulse doped HEMT is [...]

MEMS/MST Model Verification and Materials Parameter Extraction Using MEMSPEC-2000

Gutierrez A., Aceto S., Simkulet M., Patti D., Liendhard M., Krawczyk T., Lundgren A., InterScience, Inc, US

We describe the current status of the MEMSPEC-2000 MEMS/MST characterization system. This system has been designed to provide automated multi-domain measurements of a wide range of MEMS/MST devices. The system is capable of high resolution [...]

IMAP: Interferometry for Material Property Measurement in MEMS

Jensen B.D., de Boer M.P., Miller S.L., Sandia National Laboratory, US

An interferometric technique has been developed for non-destructive, high-confidence, in-si tu determination of material properties in MEMS. By using interferometry to measure the full deflection curves of beams pulled toward the substrate under electrostatic loads, [...]

SPDC: An Automatic Generator of Input Data for Process Simulators from Process Flow Data for Manufacturing

Tatsumi T., Ansai H., Mukai M., Komatsu Y., Sony Corporation, JP

We have developed a system called SPDC, which is designed to automatically generate input data for simulation from process ow data for manufacturing. As this conversion is not one-to-one translation, SPDC prepares databased knowledge called [...]

Numerical and Analytical Modeling of the Piezoelectric Transformer and Experimental Verification

Hallaert S., Sarraute E., Le Pioufle B., URA CNRS 1375, FR

In this paper, to approach the modeling aspect, we have selected a Rosen-type structure of piezo-electric transformer which, for us, seems very interesting from an educational point of view. Two approaches will be presented, (i) [...]

Complete Characterization of Electrostatically-Actuated Beams Including Effects of Multiple Discontinuities and Buckling

Chan E.K., Garikipati K., Dutton R.W., Stanford University, US

The entire process of calibrating an electromechanical simulator ñ identifying relevant parameters, designing and measuring test structures, extracting parameters using detailed electromechanical simulations, and extrapolating the behavior of an actual device ñ is presented. The [...]

Parameter Extraction for a Microwave Micromachined Switch

Chen J., Coperich K.M., Kang S-M, Schutt-Aine J., University of Illinois at Urbana-Champaign, US

This paper details new parameter extraction methods for microwave micromachined switches. Speciffically new methods for extracting switch turn-on and turn-off transient behavior and switch electromagnetic behavior are discussed. The accuracy of these methods are verified [...]

Optimal Design of Computer Experiments for the Generation of Microsystem Macromodels Using IMSET and Non-Parametric Fitting

Crary S.B., Cousseau P., Armstrong D., Woodcock D.M., Dubochet O., Lerch P., Renaud Ph., University of Michigan, US

We present a new and unique software program, IMSET, capable of finding optimal designs for computer experiments. A finite-element simulation of a micro-machined flow sensor was used to illustrate macromodel generation and to compare the [...]

Modelling Calibration and Validation of Contributions to Stress in the STI Process Sequence

Garikipati K., Rao V.S., Hao M.Y., Ibok E., De Wolf I., Dutton R.W., Stanford University, US

The mathematics and mechanics of the Shallow Trench Isolation process are described. The diffusion reaction problem is posed in terms of fundamental mass balance laws. Finite strain kinematics is invoked to model the large expansion [...]

Extraction of Compact Model Parameters for ULSI MOSFETs Using a Genetic Algorithm

Watts J., Bittner C., Heaberlin D., Hoffman J., IBM Microelectronics Division, US

Extracting an optimal set of parameter values for an FET device model is a complex problem. The final model must not only describe the performance of a set of hardware to an acceptable level of [...]