Photonic Materials & Devices – Page 16

ChiralMEM: a Novel Concept for High Density Magnetic Memory Technology

Atkinson D., Eastwood D.S., Bath M., Durham University, UK

ChiralMEM is a new approach to higher density magnetic random access memory for information technology [1-3]. It is based on memory cells capable of storing multiple bits of information per cell in contrast to the [...]

Yellow electroluminescence from sputtering synthesized aluminum nitride nanocomposite thin film containing aluminum nanocrystals

Yang M., Chen T.P., Liu Y., Wong J.I., Nanyang Technological University, SG

In this work, visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio frequency sputtering technique is reported. The yellow EL shows a spectrum peaked at 565 nm. [...]

Transient Behavior of Integrated Carbon Nanotube Field Effect Transistor Circuits

Xu Y., Srivastava A., Marulanda Jo.M., Louisiana State University, Baton Rouge, US

In this paper, a semi-classical one-dimensional electron fluid model for carbon nanotube interconnects is built which is based on a classical two-dimensional electron fluid theory taking into account electron-electron repulsive forces, which are significant in [...]

Effect of doping on the radial breathing mode of carbon nanotubes

Gerber I.C., Puech P., Gannouni A., Bacsa W.S., CEMES-CNRS, FR

Doping CNTs is an attractive alternative to control the electronic conductivity of CNTs independent of their diameter. Highly conducting nanotubes are of interest for applications in transparent thin film electrodes. When doping CNTs through substitution [...]

Subthreshold Operation of Schottky Barrier Silicon Nanowire FET

Yoo S.K., Ahn J.Y., Yang S., Lee J-H., Gwangju Institute of Science & Technology (GIST), KR

This paper presents that the sensitivity of Schottky barrier silicon nanowires FET (SB-SiNWFET) is strongly modulated by the applied back gate voltage, and reveals that the operation in the subthreshold regime gives the significant enhancement [...]

Long-Range Interactions in Quasi-One Dimensional Cylindrical Structures

Tatur K., Woods L.M., University of South Florida, US

Casimir forces originating from vacuum fluctuations of the electromagnetic fields are of increasing importance in many scientific and technological areas. The manifestations of these long-range forces at the nanoscale have led to the need of [...]

Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio

Cheng H-W, Hwang C-H, Li Y., National Chiao Tung University, TW

For nano-CMOS device design, the device with multiple-fin structure has the superior short channel effect (SCE), high driving current and has been considered as an index as potential candidates. The feasibility of various multi-fin options [...]

Atomistic Electrostatic Simulations Using Spice

Forbes L., Miller D.A., Jacob M.E., Oregon State University, US

The technique employed here to describe the three dimensional electrostatic field in a nano-scale CMOS n-channel FET near the threshold of conduction is using SPICE to solve the electrostatic equations. An atomistic solution will be [...]

Characteristic Variability of Novel Lateral Asymmetry Nano-MOSFETs Due to Random Discrete Dopants

Lee K-F, Hwang C-H, Li T-Y, Li Y., Li T-Y, Li Y., National Chiao Tung University, TW

In this paper, we for the first time investigate the random-dopant-induced device DC, the gate capacitance, the timing, and the high frequency characteristics fluctuations in nanoscale LAC devices. The conventional LAC device with higher channel [...]

Quantum Dot Gate InGaAs FETs

Jain F., Suarez E., Gogna M., Chan P-Y., Karmakar S., Fikiet J., Miller B., Heller E., University of Connecticut, US

This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTe- ZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface [...]