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HomeTopicsNanoelectronics

Topic: Nanoelectronics

Development of a MEMS Vertical Planar Coil Inductor

Chen J., Zou J., Liu C., Kang S-M, Agere Systems, US
This paper presents the results of the development of a vertical planar coil inductor. The planar coil inductor is first fabricated on silicon substrate and then assembled to the vertical position by using a novel [...]

Magnetic Properties over Several Length Scales: Micro-magnetic Modeling and Effective Medium Theory

Harter A.W., Mohler G., Moore R., Schultz J., Georgia Tech Research Institute, US
We combine micro-magnetic modeling with effective medium theory to predict the bulk properties of magnetic composites, in particular those of ferrite particles in a non-magnetic matrix. We verify our model using published measured data of [...]

The Microstructure and Computed Magnetic Properties of Nanoscaled Permanent Magnets

Zhang J.X., Zhang T.J., Zhang J.X., Zhang T.J., Cui K., Key State Laboratory of Die Technology, HUST, CN
Magnetic properties of a model nanocomposite magnet were calculated by means of computer simulation, and the effects of the amount of the soft magnetic phase on them were studied. The numerical results show that the [...]

Magnetic Device Modeling and Design

Long-Range Coulomb Interactions in Small Silicon Devices: Transconductance and Mobility Degradation

Fischetti M.V., Laux S.E., IBM Research Division, US
In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and [...]

Hybrid CA/Monte Carlo Modeling of Charge Transport in Semiconductors

Saraniti M., Goodnick S.M., Wigger S.J., Arizona State University, US
We report on the modeling of ultra-small MOS devices using a newly developed full band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Monte-Carlo/Cellular Automata simulation engine self-consistently coupled [...]

Electron Vortices in Semiconductor Devices

Mohseni K., Shakouri A., Ram R.J., California Institute of Technology, US
The hydrodynamic model of electron transport in semiconductors is analyzed and in analogy to uid mechanics the transport equation for the electron vorticity, rv, is derived. Aside from the classical hydrodynamic sources of vorticity, collision [...]

Ensemble Monte Carlo Simulation of Raman Scattering in an AlxGa1-xAs System to Determine the Relative Strength of the Polar Optical Modes

Shifren L., Ferry D.K., Arizona State University, US
A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including [...]

Self-Consistent Calculations of Spatial Electron Densities in Quantum Dots Using a Coupled Recursive Green’s Function and Poisson Solver

Badrieh F., Ferry D.K., Arizona State University, US
We are utilizing the Recursive Green's function method to calculate the conductance in quantum dots as a function of Fermi energy, magnetic field and random potentials. We have extended the use of the method to [...]

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US
Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

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