In small silicon devices,conduction electrons in the channel are subject to long-range Coulomb interactions with electrons in the heavily-doped drain,source,and gate regions.We show that for devices with channel lengths shorter than about 40 nm and oxides thinner than 2.5 nm these interactions cause a reduction of the electron velocity.We present results obtained using both semiclassical two-dimensional self-consistent Monte Carlo-Poisson simulations and a quantum-mechanical model based on electron scattering from gate-oxide interface plasmons.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 461 - 464
Industry sector: Sensors, MEMS, Electronics
Topicss: Modeling & Simulation of Microsystems, Nanoelectronics