Modeling & Simulation of Microsystems – Page 62

Full-Band Cellular Automata for Modeling Transport in Sub-Micrometer Devices

Saraniti M., Wigger S.J., Goodnick S.M., Illinois Institute of Technology, US

The aim of the present work is to discuss a new cellular automaton (CA) approach to model charge transport in semiconductors taking into account the full-band representatoin of the electronic structur eand of the phonon [...]

Simulation Study of ZnTe-CdZnTe Based Asymmentric Step Strained Layer Quantum Well Infrared Photo-Detectors

Vaya P.R., Srinivasan R., ITT Madras, IN

A AnTe - CdZnTe system based asymmetric step quantum well structures have been analyzed and the effects of step discontinuity, well discontinuity, well width, and step with on absorption coefficient and detectivity, which have a [...]

Complex Potentials, Dissipative Processes and General Quantum Transport

Ferry D.K., Barker J.R., Akis R., Arizona StateUniversity, US

Complex potentials have been used in the past to simulate dissipative processes, but the normal form of a simple constant term of the form t / h i serves only to trap/detrap particles and does [...]

Quantum Device Modeling

Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon

Windl W., Stumpf R., Masquelier M., Bunea M., Dunham S.T., Motorola, US

First-principle calculations of formation and migration energies of dopant atoms and native defects in semiconductors are a very useful input to improve semiconductor process simulations One example of this is the widely accepted first-principles model [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US

The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation

Hössinger A., Selberherr S., TU Vienna, AT

We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well [...]

Topic: Modeling & Simulation of Microsystems