Modeling & Simulation of Microsystems – Page 48

Modelling Multilayer Semiconductor Structures

Brecl K., Furlan J., University of Ljubljana, SI

The interest in multilayer thin-film semiconductor structures is becoming bigger day by day. For multilayer structures both, low-quality and good-quality materials are used. An extended Ebers-Moll model for simulating multiayer structures was developed. The standard [...]

Study of Voltage Tunable Asymmetric Quantum Well Structure for Infrared Detection

Vaya P.R., Ananda Natarajan S., Srinivasan K.R., Indian Institute of Technology, IN

The performance of GaAs/AlGaAs asymmetric quantum well infrared detectors exhibiting inter subband absorption has been studied. The asymmetric quantum well structure considered for the present study consists of two regions, a step quantum well with [...]

Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement

Chiang C.Y.T., Yeow Y.T., Ghodsi R., University of Queensland, AU

This paper proposes and demonstrates a new approach to 2-dimensional dopant profile extraction for MOSFET's by treating the source/drain-to-substrate junction as a gated diode. The small-signal capacitance of the diode measured as a function of [...]

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model

Decker S., Neinhus B., Heinemann B., Jungemann C., Meinerzhagen B., University of Bremen, DE

This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are [...]

Modelling of the “Gated-Diode” Configuration in Bulk MOSFET’s

Yip A., Yeow Y.T., Samudra G.S., Ling C.H., TECH Semiconductor, SG

A study of the “gated-diode” configuration in MOSFET’s for characterising hot-carrier degradation by employing 2-D simulations is presented in this paper. We use both process and device simulations to understand operational sensitivity of this technique. [...]

Optimization of FIBMOSs through 2-D Device Simulations

Kang J., Schroder D.K., Pivin D.P., Arizona State University, US

Channel engineering can enhance the performance of MOSFETs. Focused ion beam (FIB) implant technology is one approach for such channel engineering. We have investigated FIB and present a sophisticated optimization technique for FIB MOSFETs (FIBMOS) [...]

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions

Furlan J., Gorup Z., University of Ljubljana, SI

A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics [...]

Semiconductor Device Modeling

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]

3D Thermo-Electro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

Lu C-C., Setiadi D., Udrea F., Milne W.I., Covington J.A., Gardner J.W., Cambridge University, UK

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high [...]