Sensors, MEMS, Electronics – Page 87

Topology Optimization of Ultrasonic Transducers for Microsystem and IC Packaging

Kim J-M, Kim J-S, Kim J-M, Kim J-S, Lee S.I., Lim E.J., University of Seoul, KR

In this study, we introduce the method of topology optimization for piezoelectric transducers including ultrasonic tool horns for flip chip or wire bonding. Topology optimization performs an optimization with the objective function regardless of initial [...]

A Novel Method to Maintain Alignment Accuracy in Bonding Process Utilizing Resin as an Adhesive Material

Lee S.S., Kondo M., Ishibashi R., Kinoshita K., Kishida S., Tottori University, JP

In this paper we have firstly reported that a novel method to maintain alignment accuracy in wafer bonding process utilizing resin as an adhesive material. We have proposed tentatively localized bonding method with 1100 nm [...]

nanoCopper based solder-free electronic assembly material

Zinn A., Stoltenberg R., Lockheed Martin Space Systems Company Adv. Technol. Center, US

The Advanced Technology Center of the Lockheed Martin Corporation developed a copper-based electrical interconnect material that can be processed at 200 °C, dispensed using 75 micron size syringe tips and has shown electrical & thermal [...]

Off-Chip Printed Interconnects for Ultrathin Flexible Products

Alemohammad H., Zadeh A., Sheats J., Toyserkani E., University of Waterloo, CA

The relentless needs for increasing the functionality of microelectronic products while reducing their size and weight and having the advantages of thinness and flexibility call for novel technologies for the integration and assembly of multi-chip [...]

Packaging, Compound Semiconductors, Power Electronics

MIM Capacitors with stacked dielectrics

Gopalakrishnan H., Kailath B.J., Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, IN

In this work, the characteristics of MIM capacitors with stacked dielectrics are being compared with that with single dielectrics. (100) p-type silicon wafers with resistivity in the range 0.1-0.2 Ωcm have been used as substrate. [...]

A model to describe the hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles

Stuchinsky V.A., Kamaev G.N., Efremov M.D., Arzhannikova S.A., Institute of Semiconductor Physics, RU

A simple model is presented to clarify the formation of a hump-like feature observed in the accumulation branch of CV-characteristics of MOS capacitors with oxide-hosted Si nanoparticles.

Sector: Sensors, MEMS, Electronics