Sensors, MEMS, Electronics – Page 336

Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

Puchner H., Eib N., Kimball J., Mirabedini M., Haywood J., Aronowitz S., Cypress Semiconductor, US

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was [...]

Rule Based Validation of Processing Sequences

Hansen U., Germer C., Büttgenbach S., Franke H-J, TU Braunschweig, DE

In conventional mechanical engineering the development of a product is influenced only little by the specific requirements of the fabrication processes. When looking at the domain of micro mechanical devices this circumstance is no longer [...]

Gas Flow Simulation in a PECVD Reactor

da Silva A.N.R., Morimoto N.I., LSI – EPUSP, BR

In this work are presented the gas flo simulation in a hand made PECVD-TEOS reactor. We used the FLOTRAN-CFD code of the ANSYS simulator to predict the velocity and temperature curves in the reactor. The [...]

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]

A Physically-Based Model for Oxidation in a Circular Trench in Silicon

Xu Y., Sudhama C., Hong S., Sellers J.A., Ambadi S., Kamekona K., Averett G., Ruiz B., Wan I., Cai W., Wu Y., Costa J.C., Davies R.B., ON Semiconductor, US

Oxidation in a circular trench is of relevance in several applications, including trench capacitors in memories. In this work a model for stress-dependent oxidation is presented. The model is based on modifications of the Deal-Grove [...]

Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method

Wheeler D., Josell D., Moffat T.P., NIST, US

Damascene copper is rapidly replacing aluminum as the interconnect material of choice in silicon technology. The change is driven by the lower electrical resistivity of copper, which decreases power consumption and permits increased central processor [...]

The Level-Set Method for Modeling Epitaxial Growth

Ratsch C., Petersen M., Caflisch R.E., University of California, Los Angeles, US

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set funciton psi. [...]

Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials

Pirch N., Baldus O., Waser R., Kreutz E.W., RWTH Aachen, DE

Barium-Strontium-Titanate, BST, in the stoichiometry Ba0.7Sr0.3TiO3 to Ba0.5Sr0.5TiO3 is been considered as a promising candidate to enter into the DRAM manufacturing technology. The incompatibility between the temperatures required to crystallize the ferro/para-electric layer into the [...]

Process Modeling

A Novel Scheme of Mesh Generation from an Arbitrary Topography for MEMS Analysis

Kwon O-S, Yoon I-T, Yoon S-H, Yoon S-I, Yoon I-T, Yoon S-H, Yoon S-I, Ha T-S, Yoon I-T, Yoon S-H, Yoon S-I, Won T-Y, Inha University, KR

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charge impurity located on the z axis at a distance from the dot plane are calculated by using the method of [...]