Sensors, MEMS, Electronics – Page 249

The Computational Abilities of Random Magnetic Structures

Thenappan P., Madala S., Lusth J.C., University of Arkansas, US

In this paper, we investigate the computational abilities of random magnetic structures. Magnetic Quantum-dot Cellular Automata have the following advantages. They are simpler to fabricate and inputs are easier to control during computations. However, we [...]

Molecular Nanocluster Electronics: Organized Superstructures at Nanoscale and New Functional Nanomaterials

Kislov V., Gulyaev Yu., Medvedev B., Taranov I., Kolesov V., Kashin V., Gubin S., Khomutov G., Soldatov E., Artemiev M., Gurevich S., Russian Academy of Sciences, RU

This work is a result of a coherent effort of a consortium of Russian research groups in Nanotechnology (INTC - Interdisciplinary Nanotechnology Consortium) aimed at creating molecular electronic devices based on individual and collective properties [...]

Construction and Electrical Characterization of 0.9 nm Tall Channels Made via Pyryl Phosphonic Acid (PYPA) Self-assembly

Dong J., Parviz B.A., Yip H.L., Ma H., Jen A.K-Y., University of Washington, US

Molecular self-assembly can yield well-defined systems for charge carrier transport for the construction of a variety of devices such as field effect transistors and biosensors. We report a simple method to create an extremely confined [...]

Application-specific Molecular Logic Systems

Zgol M., Wright R.G., Adebimpe D., Callinan T., GMA Industries, Inc., US

This paper describes progress in the development efforts in creation of organic-based molecular equivalents of the legacy systems in todays aircraft and aircraft systems. Utilizing advances in nanoassembly methodologies, including electromagnetic field-based manipulation techniques and [...]

Two-Dimensional Simulation of Tunneling Using Quantum Lattice-Gas Automata

Sakai A., Kamakura Y., Taniguchi K., Osaka University, JP

We present the two-dimensional simulation of quantum tunneling considering the rough surface. It is demonstrated that the electron transmission through the potential barrier is significantly affected by the surface roughness pattern even if the same [...]

CMOS Architectures for NOR & NAND Logic Gates Using Single Electron Transistors

Venkataratnam A., Goel A.K., Michigan Technological University, US

Single electron transistor is one of the nano devices suitable for developing nano-scale logic circuits. In this paper, CMOS architectures for NOR and NAND gates have been proposed and their operational characteristics have been verified [...]

Tunable Wideband Microwave Band-Stop and Band-Pass Filters Using YIG/GGG-GaAs Layer Structures

Tsai C.S., Qiu G., Gao H., Li G.P., Yang L.W., Nikitov S.A., University of California Irvine, US

Future wideband communication and radar systems require high-speed electronically-tuned wideband microwave band-stop and band-pass filters. Ferromagnetic resonance (FMR)-based microwave devices possess the unique capability of high-speed electronic tunability, using magnetic field, for very high carrier [...]

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods

Kim Y-S, Kim Y.T., Kim Y-S, Kim Y.T., Lee K., Electronics and Telecommunications Research Institute (ETRI), KR

Tungsten oxide sensors were fabricated by using highly crystalline and homogeneous WO2.72 nanorods, previously synthesized and characterized with average 75-nm length and 4-nm diameter [1]. They provide unique opportunities for investigating the effects of size-controlled [...]

Impedance Characterization of Dielectric and Semiconducting Materials with Organic Capacitors for Organic Transistors

Li C.M., Pan L.K., Sun C.Q., Zhang J., Gamota D., Nanyang Technological University, SG

Characterization of the properties of OFET materials and devices have been conducted by I-V or C-V curves that used in MOS devices for provide information of basic shape, threshold voltage, mobility effects, velocity saturation, scaling, [...]

Quantum Information Processing with Nuclear Spin-Based Devices

Havel T.F., Cappellaro P., Ramanathan C., Cory D.G., Massachusetts Institute of Technology, US

This talk will illustrate the benefits offered by QIP with two devices which use quantum entanglement among nuclear spins to defeat the Heisenberg limits: (1) a spin gyroscope that operates by detecting the frequency shift [...]