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HomeSectorsSensors, MEMS, Electronics

Sector: Sensors, MEMS, Electronics

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN
An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

Diode Parameter Extraction by a Linear Cofactor Difference Operation Method

Ma C., Li B., Liu F., Chen Y., Zhang L., Zhang X., Liu F., Feng J., He J., Zhang L., Zhang X., Peking University, CN
The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, [...]

A Continuous yet Explicit Carrier-Based Core Model for the Long Channel Undoped Surrounding-Gate MOSFETs

Zhang J., Zhang L., He J., Liu F., Zhang J., Zhang L., Feng J., Ma C., Peking University, CN
An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact [...]

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower [...]

A Physics-Based Empirical Model for Ge Self Diffusion in Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., McMaster University, CA
We propose a physics-based model for the Ge diffusivity in SiGe and empirically fit the model to previously reported experimental results. The self-diffusivity of Ge can be given by: DGe=D0*exp(Sx)*exp(-E/kT) where x is the Ge [...]

Effect of Strain on the Oxidation Rate of Silicon Germanium Alloys

Rabie M.A., Gou S., Haddara Y.M., Knights A.P., Wojcik J., Mascher P., McMaster University, CA
We report on a series of experiments in which a strained Si0.95Ge0.05 layer 600Å thick was oxidized along with relaxed SiGe layers and Si samples. In this work, we observed that the oxidation rate of [...]

Modeling Germanium-Silicon Interdiffusion in Silicon Germanium/Silicon Super Lattice Structures

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Intermixing at heterointerfaces and the broadening of the SiGe layer in SiGe/Si super-lattice (SL) structures can be detrimental to device performance. Thus it is important to develop predictive model for interdiffusion in SL structures. In [...]

Modeling Voids in Silicon

Hasanuzzaman M., Haddara Y.M., Knights A.P., McMaster University, CA
Voids in silicon are used for gettering transition metals and may be used to detect point defect injection. High energy implants can create a separation between vacancies and interstitials making a vacancy rich region near [...]

Design for Manufacturing integrated with EDA Tools

Triltsch U., Büttgenbach S., Technical University of Braunschweig, DE
In this paper we present a process planning and optimization tool which can be linked to commercially available EDA tools. The increasing variety of available fabrication technologies and materials for microtechnological devices make the design [...]

Finite Element Analysis of a MEMS-Based High G Inertial Shock Sensor

Wang Y.P., Hsu R-Q., Wu C.W., National Chiao Tung University, TW
Inertial sensors have been extensively utilized in science and industry. For high G (>300G) applications, reaction times for conventional mechanical type shock sensors are not fast enough. In some cases the shock sensor structures disintegrate(>5000G). [...]

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