Sensors, MEMS, Electronics – Page 104

Fracture mechanical test methods for interface crack evaluation of electronic packages

Keller J., Maus I., Pape H., Wunderle B., Michel B., AMIC Angewandte Micro-Messtechnik GmbH, DE

The ongoing development of highly integrated electronic packages leads to a steadily increasing number of material interfaces within a package. In combination with increasing harshness (vibration, humidity, temperature) of the system environment the reliability of [...]

Reliability Analysis of Low Temperature Low Pressure Ag-Sinter Die Attach

Mrossko R., Oppermann H., Wunderle B., Winkler T., Michel B., Berliner Nanotest und Design GmbH, DE

The amount of heat which has to be dissipated from power electronics and microprocessors increases more and more due the ongoing miniaturization. Therefore new interface materials with high electrical and thermal conductivity have to be [...]

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N., Vasileska D., Arizona State University, US

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

Three-dimensional Deformation Analysis of MEMS/NEMS by means of X-ray Computer-Tomography

Hammacher J., Dost M., Faust W., Scheiter L., Erb R., Michel B., Fraunhofer ENAS, DE

High resolution x-ray computertomography allows the non-destructive 3D-analysis of materials and compounds. Therefore, information of the internal structure of the material or the device becomes available, which are otherwise only gained by destructive analysis. But [...]

Micro & Nano Reliability

Self-assembled monolayer (SAMs) and electroplating process for Cu filling on 32-nm trench

Hong M., Hanyang University, KR

To improve the conformality of Cu seed layer prepared by ELD, we have also developed a novel activation technique by combining a self assembled monolayer (SAM) and Au catalyst. A coupling agent to anchor Au [...]

VerilogA modeling and simulation of Memristor for circuit application

Xia D., He L., San Jose State University, US

In this work, we first investigated the switching mechanisms and the resistive switching behavior that take place in the memristor. Both the bipolar and unipolar switching behaviors are studied. The ionic transportation mechanism is used [...]

Nanoporous thin-film waveguide resonance sensors with wavelength interrogation over a broad bandwidth

Qi Z-M, Zhang Z., Liu Q., Lu D., Institute of Electronics, Chinese Academy of Sciences, CN

Nanoporous dielectric film based leaky-mode waveguide resonance sensors have attracted considerable attention because of their interesting features [1-4]. Such sensors generally operate in the angular interrogation mode [1-3]. The first application of the wavelength interrogation [...]

Photon-Induced Biomolecular Sensing and Processing: Towards Engineering, Science and Medical Applications

Lyshevski S.E., Rochester Institute of Technology, US

This paper discusses and researches photon-induced sensing and processing exhibited by various vertebrates and invertebrates. In particular, rhodopsin photon receptor functionality and energetics are examined by applying quantum mechanics. We focus on fundamentals in order [...]

Characteristics of co-doped device with hole and electron transport material

Park N.R., Ryu G.Y., Lim D.H., Lee S.J., Kim Y.K., Shin D.M., Hong-ik University, KR

We demonstrated green organic lighte-emittin diodes (OLEDs) improved by co-doped using hole transport material, N′-bis-(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) and electron transport material, bis(2-methyl-8-quninolinato)-4-phenylphenolate aluminum (Balq), into emitting layer. The co-doped materials impove charge blance by injecting hole [...]