, Erb, R.
, Faust, W.
, Hammacher, J.
, Michel, B.
, Scheiter, L.
, Fraunhofer ENAS, DE
High resolution x-ray computertomography allows the non-destructive 3D-analysis of materials and compounds. Therefore, information of the internal structure of the material or the device becomes available, which are otherwise only gained by destructive analysis. But [...]
Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.
, Mrossko, R.
, Oppermann, H.
, Winkler, T.
, Wunderle, B.
, Berliner Nanotest und Design GmbH, DE
The amount of heat which has to be dissipated from power electronics and microprocessors increases more and more due the ongoing miniaturization. Therefore new interface materials with high electrical and thermal conductivity have to be [...]
, Maus, I.
, Michel, B.
, Pape, H.
, Wunderle, B.
, AMIC Angewandte Micro-Messtechnik GmbH, DE
The ongoing development of highly integrated electronic packages leads to a steadily increasing number of material interfaces within a package. In combination with increasing harshness (vibration, humidity, temperature) of the system environment the reliability of [...]
The on-going need for miniaturization and speed in electronics industry has brought a requirement for better performing thermal management systems. Therefore we have developed a test stand to characterize the aging behaviour of most common [...]
, Fecht, H-J.
, Gluche, P.
, Sadrifar, N.
, Wiora, M.
, Ulm University, DE
Nanocrystalline diamond (NCD) offers great potential for many micro-mechanical systems, particularly where low friction, reliability and mechanical integrity are of great importance. The reduction of grain size in NCD films to several nanometers is, however, [...]
The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed [...]
The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF [...]
Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation [...]
In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift [...]
The presented study concerns with structurization of dispersed phase of polymer latexes during their freezing-thawing. It is known that freezing might have disturbed the latexes aggregate stability. In the presented work it was established that [...]
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems