TechConnect Proceedings Papers
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2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET
We propose a novel device structure (Si1-xGex/Si/Si1-xGex hetero-structure), which is called “center-channel (CC) double-gate (DG) MOSFET, ”. The device performance of the proposed FET structure was investigated with our two-dimensional quantum-mechanical simulator which is based [...]
Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation
We simulate the process of energy relaxation in two-dimensional-electron-gas (2DEG) via electron-electron (e-e) scattering by Monte Carlo method. Results indicate a sub-picosecond energy relaxation response time to external perturbation. We suggest that carriers are subjected [...]
Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures
The continued scaling of semiconductor devices creates numerous challenges which have to be overcome in order to achieve device behavior that satisfies speed and power constraints. Possible alternatives to conventional CMOS devices include strained-Si or [...]
Hole Transport Simulations in p-channel Si MOSFETs
We use a Monte Carlo method to investigate hole transport in ultrasmall p-channel MOSFETs with gate lengths of 25 nm. To model band-structure effects like warping, anisotropy and non-parabolicity on carrier transport, our device simulator [...]
SOS Gate Capacitance Modeling
A gate capacitance model for the SOS structure has been developed. The spatial dependence of the potential defines the changes in the charge density as well as the boundary conditions between the layers. The SOS [...]
MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation
The eigenfunctions from solutions of the Schrödinger equation for a triangular potential well are the Airy functions. The triangular potential approximation has been shown to be a good approximation for the charge density when the [...]
Controllable Electron Transport in the Lateral Nanostructure
The study of two-dimensional electronic systems evokes considerable interest due to the broad utilization of the systems in nanotechnology. Design of new devices are commonly based on exploiting the different configurations of multiple-quantum-well (MQW) structures. [...]
Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS
Different modeling approaches for the sub-100nm MOSFET are discussed in [1] and the surface potential description model is reported to be promising, [1, 2]. Surface potential changes impact gate capacitance and current-voltage (I-V) characteristics of [...]