Papers – Page 1056 – TechConnect Briefs

Simulation of Mixed-Signal Systems in Standard VHDL

Grätz H., Fischer W-J, Fraunhofer-Institute of Microelectronic Circuits and Systems, DE

Historically, the analogue and digital parts of a hardware design have been modelled and simulated in different environments and could not be combined in a single simulator. On the other hand, if a design contains [...]

Inductance Extraction by Means of the Monte Carlo Method

Leonhardt G., Hager C., Regli P., Fichtner W., ETH-EPFL, CH

This paper presents a novel inductance extraction procedure which is based on a Monte Carlo sampling technique. Partial inductances for static current distributions can be computed efficiently and with small memory requirements, thus enabling the [...]

Analysis and Characterization of Laterally Induced Electrostatic Repulsive Forces

Lee K.B., Cho Y-H, Korea Advanced Institute of Science and Technology, KR

We analyze and characterize the laterally induced electrostatic repulsive force generated by the in-plane asymmetry of electrostatic field. Basic concept of the electrostatic repulsive actuation is presented. Fundamental nature of the repulsive force has been [...]

Validation and Calibration of Electrothermal Device Models Using Infrared Laser Probing Techniques

Thalhammer R., Fürböck C., Seliger N., Gornik E., Wachutka G., Technical University of Münich, DE

As it has recently been demonstrated, the internal distribution of carrier concentration and temperature is accessible to accurate measurements by various infrared laser probing techniques. In this work we present an advanced method for the [...]

Methodology for Calibrating Process and Device Simulators by Extracting Model Parameters from Electrical Data

Ho H-M, Zu Y., Loiko K.V., Lim D.H.Y., Chartered Semiconductor Manufacturing Ltd., SG

This paper describes a physically based methodology for calibrating 2D semiconductor process and device simulators. The calibration begins with the determination of 1D and 2D doping profiles by means of extracting model parameters from electrical [...]

Rational RSM Models for Device Characteristics as Functions of Process Parameters

Granik Y., Moroz V., PDF Solutions, Inc., US

Conventional polynomial Response Surface Methodology (RSM) fails to provide oscillation-free analytical models for some device data with singularity like subthreshold slope vs threshold adjustment dose, poly gate length vs stepper defocus, etc. New type of [...]

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

Kapila D., Kulkarni M., Fernando C., Davis J., Vasanth K., Pollack G., Texas Instruments, Inc., US

In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles [...]

Augmented Reality as an Interactive Tool for Microscopic Imaging, Measurement and Model Based Verification of Simulated Parts

Sulzmann A., Schütz C., Hügli H., Jacot J., EPFL, CH

Presently microsystems are gaining in interest. Microsystems are small, independent modules, incorporating various functions, such as electronic, micro mechanical, data processing, optical, chemical, medical and biological functions. Though improving the manufacturing technologies, the measuring of [...]

Fast Inductance Extraction of 3-D Structures with Non-Constant Permeabilities

Massoud Y., White J.K., Massachusetts Institute of Technology, US

In this paper we present a discretized integral formulation for calculating the frequency-dependent inductance and resistance for 3-D structures that contains permeable materials. The method uses a magnetic surface charge formulation, and we present analytic [...]

1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET

Fu H., Kniffin M.L., Watanabe G., Masquelier M.P., Whitfield J., Motorola, Inc., US

This paper presents the first detailed characterization and modeling of 1/f noise in a depletion mode surface-micromachined suspended gate nMOSFET. The results are compared and contrasted with the 1/f noise characteristics of a standard depletion [...]